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2N5433E PDF预览

2N5433E

更新时间: 2024-01-31 16:23:47
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关
页数 文件大小 规格书
6页 74K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AC

2N5433E 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.75其他特性:LOW INSERTION LOSS
外壳连接:GATE配置:SINGLE
最大漏源导通电阻:7 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-206AC
JESD-30 代码:O-MBCY-W3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N5433E 数据手册

 浏览型号2N5433E的Datasheet PDF文件第2页浏览型号2N5433E的Datasheet PDF文件第3页浏览型号2N5433E的Datasheet PDF文件第4页浏览型号2N5433E的Datasheet PDF文件第5页浏览型号2N5433E的Datasheet PDF文件第6页 
2N5432/5433/5434  
Vishay Siliconix  
N-Channel JFETs  
PRODUCT SUMMARY  
Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns)  
2N5432  
2N5433  
2N5434  
–4 to –10  
–3 to –9  
–1 to –4  
5
7
10  
10  
10  
2.5  
2.5  
2.5  
10  
FEATURES  
BENEFITS  
APPLICATIONS  
D Low On-Resistance: 2N5432 <5  
D Fast Switching—tON: 2.5 ns  
D High Off-Isolation—ID(off): 10 pA  
D Low Capacitance: 11 pF  
D Low Insertion Loss  
D Low Error Voltage  
D Analog Switches  
D Choppers  
D High-Speed Analog Circuit Performance  
D Negligible “Off-Error,” Excellent Accuracy  
D Good Frequency Response  
D Sample-and-Hold  
D Normally “On” Switches  
D Current Limiters  
D Eliminates Additional Buffering  
DESCRIPTION  
The 2N5432/5433/5434 are suitable for high-performance  
analog switching and amplifier applications. Breakdown  
voltage characteristics, low on-resistance, and very fast  
switching make these devices are ideal for a wide range of  
applications.  
The hermetically-sealed TO-206AC (TO-52) package is  
suitable for processing per MIL-S-19500 (see Military  
Information). For similar products in TO-236 (SOT-23) or  
TO-226AA (TO-92) packages, see the J/SST108 series data  
sheet.  
TO-206AC  
(TO-52)  
S
1
2
3
D
G and Case  
Top View  
ABSOLUTE MAXIMUM RATINGS  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
Notes  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C  
a. Derate 2.4 mW/_C above 25_C  
Document Number: 70245  
S-04028—Rev. F, 04-Jun-01  
www.vishay.com  
7-1  

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