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10ETS10SPBF PDF预览

10ETS10SPBF

更新时间: 2024-02-27 10:33:33
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
7页 167K
描述
Input Rectifier Diode, 10 A

10ETS10SPBF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSFM-T2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59应用:HIGH VOLTAGE HIGH POWER
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):225
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

10ETS10SPBF 数据手册

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VS-10ETS..SPbF High Voltage Series  
Vishay High Power Products  
Input Rectifier Diode, 10 A  
DESCRIPTION/FEATURES  
Base cathode  
2
The VS-10ETS..SPbF rectifier series has been  
optimized for very low forward voltage drop, with  
moderate leakage. The glass passivation  
technology used has reliable operation up to  
150 °C junction temperature.  
Typical applications are in input rectification and  
these products are designed to be used with  
Vishay HPP switches and output rectifiers which  
are available in identical package outlines.  
1
3
Anode  
Anode  
D2PAK  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
VF at 10 A  
< 1 V  
• Compliant to RoHS directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Designed and qualified for industrial level  
IFSM  
200 A  
VRRM  
800 V/1200 V  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C  
common heatsink of 1 °C/W  
12.0  
16.0  
A
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Sinusoidal waveform  
A
V
800/1200  
200  
A
VF  
10 A, TJ = 25 °C  
1.1  
V
TJ  
- 40 to 150  
°C  
VOLTAGE RATINGS  
V
RRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETS08SPbF  
VS-10ETS10SPbF  
VS-10ETS12SPbF  
800  
1000  
1200  
900  
1100  
1300  
0.5  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 105 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
10  
170  
200  
130  
145  
1450  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
Maximum I2t for fusing  
I2t  
A2s  
Maximum I2t for fusing  
I2t  
A2s  
Document Number: 94338  
Revision: 08-Apr-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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