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10ETF12STRRPBF PDF预览

10ETF12STRRPBF

更新时间: 2024-01-20 09:45:07
品牌 Logo 应用领域
威世 - VISHAY 整流二极管高功率电源快速软恢复高电源软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 225K
描述
Fast Soft Recovery Rectifier Diode, 10 A

10ETF12STRRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AC包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.29其他特性:FREE WHEELING DIODE
应用:FAST SOFT RECOVERY HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.33 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:185 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
最大反向恢复时间:0.31 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

10ETF12STRRPBF 数据手册

 浏览型号10ETF12STRRPBF的Datasheet PDF文件第2页浏览型号10ETF12STRRPBF的Datasheet PDF文件第3页浏览型号10ETF12STRRPBF的Datasheet PDF文件第4页浏览型号10ETF12STRRPBF的Datasheet PDF文件第5页浏览型号10ETF12STRRPBF的Datasheet PDF文件第6页浏览型号10ETF12STRRPBF的Datasheet PDF文件第7页 
VS-10ETF..SPbF Soft Recovery Series  
Vishay High Power Products  
Fast Soft Recovery Rectifier Diode, 10 A  
FEATURES  
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 260 °C  
• Compliant to RoHS directive 2002/95/EC  
Base  
common  
cathode  
+
• Halogen-free according to IEC 61249-2-21  
definition  
2
• Designed and qualified for industrial level  
APPLICATIONS  
• Output rectification and freewheeling in  
inverters, choppers and converters  
1
3
D2PAK (SMD-220)  
-
-
Anode  
Anode  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
PRODUCT SUMMARY  
DESCRIPTION  
VF at 10 A  
< 1.33 V  
80 ns  
The VS-10ETF..SPbF fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.  
trr  
VRRM  
1000 V/1200 V  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Sinusoidal waveform  
A
V
1000/1200  
160  
A
10 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.33  
V
trr  
80  
ns  
°C  
TJ  
- 40 to 150  
VOLTAGE RATINGS  
V
RRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-10ETF10SPbF  
VS-10ETF12SPbF  
1000  
1200  
1100  
1300  
4
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 125 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
10  
160  
185  
128  
180  
1800  
A
Maximum peak one cycle non-repetitive  
surge current  
IFSM  
Maximum I2t for fusing  
I2t  
A2s  
Maximum I2t for fusing  
I2t  
A2s  
Document Number: 94094  
Revision: 26-Apr-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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