Datasheet > VHB80-12_07

VHB80-12_07

更新时间： 2024-09-30 08:12:59

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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VHB80-12_07 数据手册

VHB80-12

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VHB80-12 is Designed for

Class C, 12.5 V High Band

Applications up to 175 MHz.

PACKAGE STYLE .500 6L FLG

FEATURES:

• Internal Input Matching Network

• P_G= 7.0 dB at 80 W/175 MHz

• Omnigold™ Metalization System

2x ØN

FULL R

.725/18,42

MAXIMUM RATINGS

20 A

36 V

I_C

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

.150 / 3.43

.160 / 4.06

.045 / 1.14

16 V

.210 / 5.33

.835 / 21.21

.200 / 5.08

.490 / 12.45

.003 / 0.08

.220 / 5.59

.865 / 21.97

.210 / 5.33

.510 / 12.95

.007 / 0.18

36 V

4.0 V

.125 / 3.18

.725 / 18.42

230 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.75 °C/W

.970 / 24.64

.090 / 2.29

.150 / 3.81

.980 / 24.89

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

.120 / 3.05

T_STG

θ_JC

ORDER CODE: ASI10718

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 100 mA

I_E= 10 mA

4.0

BV_CES

BV_CEO

BV_EBO

I_CES

_CE= 12.5 V

---

V_CE= 5.0 V

I_C= 5.0 A

h_FE

V_CB= 12.5 V

f = 1.0 MHz

380

C_OB

7.0

P_G

V_CE= 12.5 V

P_OUT= 80 W

f = 175 MHz

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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