Datasheet > VHB80-12

VHB80-12

更新时间： 2024-11-19 22:33:15

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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VHB80-12 数据手册

VHB80-12

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VHB80-12 is Designed for

PACKAGE STYLE .500 6L FLG

FEATURES:

2x ØN

FULL R

· Omnigold™ Metalization System

.725/18,42

MAXIMUM RATINGS

20 A

36 V

I_C

MINIMUM

inches mm

MAXIMUM

inches mm

DIM

.150 / 3.43

.160 / 4.06

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

.045 / 1.14

.210 / 5.33

.835 / 21.21

.200 / 5.08

.490 / 12.45

.003 / 0.08

.220 / 5.59

.865 / 21.97

.210 / 5.33

.510 / 12.95

.007 / 0.18

16 V

36 V

.125 / 3.18

4.0 V

.725 / 18.42

.970 / 24.64

.090 / 2.29

.150 / 3.81

.980 / 24.89

.105 / 2.67

.170 / 4.32

.285 / 7.24

.135 / 3.43

270 W

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.75 ^OC/W

.120 / 3.05

T_STG

q_JC

ORDER CODE: ASI10718

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_C= 100 mA

I_E= 10 mA

V_CE= 12.5 V

V_CE= 5.0 V

4.0

BV_CES

BV_CEO

BV_EBO

I_CES

---

h_FE

I_C= 5.0 A

C_ob

V_CB= 12.5 V

V_CC=12.5 V

f = 1.0 MHz

f = 175 MHz

380

P_G

7.0

P_OUT= 80 W

h_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

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