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VG4632321AQ-45R PDF预览

VG4632321AQ-45R

更新时间: 2024-09-16 22:09:27
品牌 Logo 应用领域
世界先进 - VML 内存集成电路
页数 文件大小 规格书
81页 1954K
描述
524,288x32x2-Bit CMOS Synchronous Graphic RAM

VG4632321AQ-45R 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:QFP,针数:100
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.84
访问模式:DUAL BANK PAGE BURST最长访问时间:4 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PQFP-G100
长度:20 mm内存密度:33554432 bit
内存集成电路类型:SYNCHRONOUS GRAPHICS RAM内存宽度:32
功能数量:1端口数量:1
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX32封装主体材料:PLASTIC/EPOXY
封装代码:QFP封装形状:RECTANGULAR
封装形式:FLATPACK认证状态:Not Qualified
座面最大高度:3.4 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

VG4632321AQ-45R 数据手册

 浏览型号VG4632321AQ-45R的Datasheet PDF文件第2页浏览型号VG4632321AQ-45R的Datasheet PDF文件第3页浏览型号VG4632321AQ-45R的Datasheet PDF文件第4页浏览型号VG4632321AQ-45R的Datasheet PDF文件第5页浏览型号VG4632321AQ-45R的Datasheet PDF文件第6页浏览型号VG4632321AQ-45R的Datasheet PDF文件第7页 
Preliminary  
VG4632321A  
524,288x32x2-Bit  
CMOS Synchronous Graphic RAM  
VIS  
Overview  
The VG4632321A SGRAM is a high-speed CMOS synchronous graphic RAM containing 32M bits. It is  
internally configured as a dual 512K x 32 DRAM with a synchronous interface (all signals are registered on  
the positive edge of the clock signal, CLK). Each of the 512K x 32 bit bank is organized as 2048 rows by 256  
columns by 32 bits. Read and write accesses to the SGRAM are burst oriented; accesses start at a selected  
location and continue for a programmed number of locations in a programmed sequence. Accesses begin  
with the registration of a BankActivate command which is then followed by a Read or Write command.  
The VG4632321A provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with  
burst termination option. An Auto Precharge function may be enabled to provide a self-timed row precharge  
that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy  
to use. In addition, it features the write per bit and the masked block write functions.  
By having a programmable Mode register and special mode register, the system can choose the best  
suitable modes to maximize its performance. These devices are well suited for applications requiring high  
memory bandwidth, and when combined with special graphics functions result in a device particularly well  
suited to high performance graphics applications.  
Pin Assignment (Top View)  
Features  
80  
79  
78  
77  
76  
75  
74  
73  
72  
71  
70  
1
2
3
4
5
6
DQ3  
DQ28  
DDQ  
V
V
DDQ  
DQ4  
DQ5  
DQ27  
DQ26  
• Fast access time from clock: 4.5/5/5.5/6/7ns  
• Fast clock rate: 222/200/183/166/143MHz  
• Fully synchronous operation  
V
SSQ  
DQ6  
DQ7  
V
SSQ  
DQ25  
7
DQ24  
V
DDQ  
DQ16  
DQ17  
8
V
DDQ  
• Internal pipelined architecture  
9
DQ15  
DQ14  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
• Dual internal banks(512K x 32-bit x 2-bank)  
• Programmable Mode and Special Mode registers  
- CAS Latency: 1, 2, or 3  
- Burst Length: 1, 2, 4, 8, or full page  
- Burst Type: interleaved or linear burst  
- Burst Read Single Write  
- Load Color or Mask register  
• Burst stop function  
• Individual byte controlled by DQM0-3  
• Block write and write-per-bit capability  
• Auto Refresh and Self Refresh  
• 2048 refresh cycles/32ms  
V
SSQ  
V
SSQ  
69  
DQ18  
DQ19  
DQ13  
DQ12  
68  
V
V
67  
66  
DDQ  
DD  
V
V
V
DDQ  
SS  
DD  
V
SS  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
DQ20  
DQ21  
DQ11  
DQ10  
V
SSQ  
V
SSQ  
DQ22  
DQ23  
DQ9  
DQ8  
V
DDQ  
V
DDQ  
DQM0  
DQM2  
NC  
DQM3  
DQM1  
CLK  
CKE  
DSF  
NC  
WE  
CAS  
RAS  
CS  
BS  
A9  
• Single + 3.3V ±0.3V power supply  
• Interface: LVTTL  
A8/AP  
• JEDEC 100-pin Plastic QFP package  
Key Specifications  
VG4632321A  
-4.5/-5/-5.5/-6/-7  
4.5/5/5.5/6/7 ns  
tCK  
tRAS  
tAC  
Clock Cycle time(min.)  
Row Active time(min.)  
Access time from CLK(max.)  
Row Cycle time(min.)  
40/40/40/42/42 ns  
4/4.5/5/5.5/6 ns  
tRC  
55/55/56.5/60/62 ns  
Document:  
Rev.1  
Page1  

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