生命周期: | Active | 包装说明: | FLANGE MOUNT, R-CDFM-F4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.21 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 125 V |
最大漏极电流 (Abs) (ID): | 40 A | 最大漏极电流 (ID): | 40 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-CDFM-F4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 500 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VFT300-50_07 | ASI |
获取价格 |
VHF POWER MOSFET | |
VFT30-28 | ASI |
获取价格 |
N-Channel Enhancement Mode VHF POWER MOSFET | |
VFT3045BP | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection | |
VFT3045BP_15 | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier | |
VFT3045BP-M3/4W | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection | |
VFT3045C | VISHAY |
获取价格 |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier | |
VFT3045CBP | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection | |
VFT3045CBP_1205 | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier | |
VFT3045CBP_15 | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection | |
VFT3045CBP-M3 | VISHAY |
获取价格 |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection |