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VFT300-50

更新时间: 2024-11-13 22:16:07
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
1页 23K
描述
VHF POWER MOSFET N-Channel Enhancement Mode

VFT300-50 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.21外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:125 V
最大漏极电流 (Abs) (ID):40 A最大漏极电流 (ID):40 A
FET 技术:METAL-OXIDE SEMICONDUCTOR最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-CDFM-F4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):500 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

VFT300-50 数据手册

  
VFT300-50  
VHF POWER MOSFET  
N-Channel Enhancement Mode  
DESCRIPTION:  
PACKAGE STYLE .400 BAL FLG(D)  
A
The VFT300-50 is Designed for  
AM/FM Power Amplifier Applications up  
to 250 MHz.  
FULL R  
(4X).060 R  
.080x45°  
B
D
D
.1925  
E
M
D
C
FEATURES:  
G
G
F
Source connected to flange  
· PG = 15 dB Typ. at 300W/ 175 MHz  
· 5:1 Load VSWR Capability  
· Omnigold™ Metalization System  
G
H
N
I
L
J
K
MINIMUM  
MAXIMUM  
DIM  
inches  
/
mm  
inches / mm  
.220 / 5.59  
.230 / 5.84  
MAXIMUM RATINGS  
A
B
C
D
E
F
G
H
I
.210 / 5.33  
.125 / 3.18  
ID  
40 A  
125 V  
.380 / 9.65  
.580 / 14.73  
.390 / 9.91  
.620 / 15.75  
VDSS  
VGS  
PDISS  
TJ  
.435 / 11.05  
1.090 / 27.69  
1.335 / 33.91  
.003 / 0.08  
.060 / 1.52  
.100 / 2.54  
1.105 / 28.07  
1.345 / 34.16  
.007 / 0.18  
.070 / 1.78  
.115 / 2.92  
.230 / 5.84  
.407 / 10.34  
.870 / 22.10  
± 40 V  
500 W @ TC = 25 OC  
-65 OC to +150 OC  
-65 OC to +200 OC  
0.35 OC/W  
J
K
L
.395 / 10.03  
.850 / 21.59  
M
N
TSTG  
qJC  
ORDER CODE: ASI10710  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVDSS  
IDSS  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
ID = 50 mA  
VDS = 50 V  
VDS = 0 V  
125  
V
VGS = 0 V  
5.0  
1.0  
5.0  
mA  
m A  
V
IGSS  
VGS = 20 V  
VDS = 10 V  
VDS = 10 V  
VGS(th)  
gfs  
ID = 100 mA  
ID = 5.0 A  
1.0  
3,000  
mS  
Ciss  
Coss  
350  
250  
20  
VDS = 50 V  
VGS = 0 V  
f = 1.0 MHz  
pF  
Crss  
PG  
h D  
VDD = 50 V  
IDQ = 500 mA  
Pout = 300 W  
14  
60  
15  
65  
dB  
%
f = 175 MHz  
y
VSWR = 5:1 AT ALL PHASE ANGLES  
NO DEGRADATION IN OUTPUT POWER  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without ntoice.  
REV. A  
1/1  

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