Datasheet > VFT300-28_07

VFT300-28_07

更新时间： 2022-09-12 11:30:09

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描述
VHF POWER MOSFET

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VFT300-28_07 数据手册

VFT300-28

VHF POWER MOSFET

Silicon N-Channel Enhancement Mode

DESCRIPTION:

The VFT300-28 is Designed for

Wideband High Power VHF Amplifier

Applications operating up to 250 MHz.

PACKAGE STYLE .400 BAL FLG (D)

FULL R

.080x45°

FEATURES:

(4X).060 R

.1925

• P_G= 14 dB Typical at 175 MHz

• η_D= 55% Typ. at P_OUT= 300 Watts

• Omnigold™ Metalization System

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

I_D

V_(BR)DSS

V_DGR

V_GS

16 A

65 V

.220 / 5.59

.230 / 5.84

.210 / 5.33

.125 / 3.18

.380 / 9.65

.390 / 9.91

65 V

.580 / 14.73

.620 / 15.75

.435 / 11.05

1.090 / 27.69

1.335 / 33.91

.003 / 0.08

.060 / 1.52

.100 / 2.54

1.105 / 28.07

1.345 / 34.16

.007 / 0.18

.070 / 1.78

.115 / 2.92

.230 / 5.84

.407 / 10.34

.870 / 22.10

± 40 V

P_DISS

T_J

500 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.35 °C/W

.395 / 10.03

.850 / 21.59

T_STG

θ_JC

ORDER CODE: ASI10707

CHARACTERISTICS T_C= 25 °C

SYMBOL

V_(BR)DSS

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

V_GS= 0 V

V_DS= 28 V

V_DS= 0 V

V_DS= 10 V

V_GS= 10 V

V_DS= 10 V

I_DS= 100 mA

V_GS= 0 V

V_GS= 20 V

I_D= 100 mA

I_D= 10 A

µA

I_DSS

I_GSS

V_GS

V_DS

G_FS

5.0

1.0

5.0

1.5

1.0

I_D= 5 A

3500

375

188

C_iss

C_oss

C_rss

V_GS= 28 V

V_DS= 0 V

F = 1.0 MHz

V_DD= 28 V

f = 175 MHz

I_DQ= 2 x 250 mA

P_OUT= 300 W

G_PS

η_D

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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