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VFT30-28 PDF预览

VFT30-28

更新时间: 2024-01-03 21:19:45
品牌 Logo 应用领域
ASI 晶体射频场效应晶体管放大器局域网
页数 文件大小 规格书
2页 42K
描述
N-Channel Enhancement Mode VHF POWER MOSFET

VFT30-28 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):2.5 A
最大漏极电流 (ID):2.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):97 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

VFT30-28 数据手册

 浏览型号VFT30-28的Datasheet PDF文件第2页 
VFT30-28  
VHF POWER MOSFET  
N-Channel Enhancement Mode  
DESCRIPTION:  
The VFT30-28 is a gold metallized N-  
Channel enhancement mode  
MOSFET, intended for use in 28VDC  
large signal applications up to  
400MHz.  
PACKAGE STYLE .380 4L FLG  
.112 x 45°  
B
A
Ø.125 NOM.  
FULL R  
S
D
S
J
.125  
FEATURES:  
G
PG = 14 dB Typ. at 30 W /175MHz  
10:1 Load VSWR Capability  
Omnigold™ Metalization System  
C
D
E
F
I
H
G
MAXIMUM RATINGS  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
ID  
V(BR)DSS  
VDGR  
VGS  
5.0 A  
65 V  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
65 V  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
± 40 V  
PDISS  
TJ  
100 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
1.75 °C/W  
.240 / 6.10  
J
ORDER CODE: ASI10703  
TSTG  
θJC  
CHARACTERISTICS TC = 25°C  
SYMBOL  
V(BR)DSS  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
VGS = 0 V  
VDS = 28 V  
VDS = 0 V  
VDS = 10 V  
VDS = 10 V  
IDS = 10 mA  
60  
---  
---  
---  
---  
---  
---  
4.0  
1.0  
6.0  
---  
V
mA  
µA  
IDSS  
IGSS  
VGS  
GFS  
VGS = 0 V  
---  
VGS = 20 V  
ID = 25 mA  
ID = 500 mA  
---  
1.0  
0.5  
V
mho  
46  
33  
6.0  
Ciss  
Coss  
Crss  
VDS = 28 V  
VGS = 0 V  
f = 1.0 MHz  
pF  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/2  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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