Datasheet > VFT1045

VFT1045

更新时间： 2024-11-16 14:53:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	74K
描述
Low Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VFT1045 数据手册

VFT1045

Vishay General Semiconductor

www.vishay.com

Low Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.41 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AC

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C max. 10 s,

per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VFT1045

For use in high frequency converters, switching power

PIN 1

supplies, freewheeling diodes, OR-ing diode, DC/DC

PIN 2

converters, and reverse battery protection.

MECHANICAL DATA

Case: ITO-220AC

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

10 A

45 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

100 A

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 10 A

T_Jmax.

0.52 V

150 °C

ITO-220AC

Single die

Package

Diode variation

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VFT1045

UNIT

Maximum repetitive peak reverse voltage

Maximum DC forward bypassing current (fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Isolation voltage from terminal to heatsink t = 1 min

Operating junction and storage temperature range

V_AC

1500

T_J, T_STG

-40 to +150

°C

Note

(1)

With heatsink

Revision: 07-Jul-17

Document Number: 87540

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VFT1045相关器件

型号	品牌	获取价格	描述	数据表
VFT1045BP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045BP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045BP-M3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045C	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VFT1045CBP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045CBP_1205	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT1045CBP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT1045CBP-M3/4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VFT1045CBP-M3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VFT1045C-M3	VISHAY	获取价格	Low forward voltage drop, low power losses