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VF40150C-E3-4W PDF预览

VF40150C-E3-4W

更新时间: 2024-11-24 08:13:11
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 161K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VF40150C-E3-4W 数据手册

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New Product  
V40150C, VF40150C, VB40150C & VI40150C  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.55 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 245 °C (for TO-263AB package)  
3
3
• Solder bath temperature 275 °C maximum, 10 s,  
per JESD 22-B106 (for TO-220AB, ITO-220AB and  
TO-262AA package)  
2
2
1
1
V40150C  
VF40150C  
TO-262AA  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
PIN 2  
PIN 2  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
CASE  
TO-263AB  
TYPICAL APPLICATIONS  
K
K
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
2
1
3
MECHANICAL DATA  
2
1
Case: TO-220AB, ITO-220AB, TO-263AB and  
VB40150C  
VI40150C  
TO-262AA  
PIN 1  
PIN 3  
PIN 1  
PIN 2  
K
PIN 2  
K
Molding compound meets UL 94 V-0 flammability  
rating  
HEATSINK  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 20 A  
VRRM  
150 V  
160 A  
0.75 V  
150 °C  
IFSM  
VF at IF = 20 A  
TJ max.  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL V40150C  
VF40150C VB40150C VI40150C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
150  
V
Maximum average forward rectified current  
(fig. 1)  
per device  
per diode  
40  
20  
IF(AV)  
IFSM  
EAS  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
160  
150  
Non-repetitive avalanche energy  
at TJ = 25 °C, L = 60 mH per diode  
mJ  
Peak repetitive reverse current at tp = 2 µs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
dV/dt  
0.5  
10 000  
A
V/µs  
V
Voltage rate of change (rated VR)  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number: 89048  
Revision: 24-Jun-09  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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