Datasheet > VF40100G

VF40100G

更新时间： 2024-11-24 05:53:43

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	168K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

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中文翻译

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数据手册

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VF40100G 数据手册

V4010^N0^eG^w,^PV^roF^d4^u0^ct100G, VB40100G & VI40100G

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.42 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

V40100G

VF40100G

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

and TO-262AA package)

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB40100G

VI40100G

PIN 1

PIN 2

PIN 1

PIN 2

MECHANICAL DATA

HEATSINK

PIN 3

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

PRIMARY CHARACTERISTICS

Epoxy meets UL 94V-0 flammability rating

I_F(AV)

2 x 20 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

V_RRM

100 V

200 A

0.67 V

150 °C

I_FSM

V_Fat I_F= 20 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40100G

VF40100G VB40100G

VI40100G

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

Maximum average forward rectified current

(Fig. 1)

per device

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

200

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 88970

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与VF40100G相关器件

型号	品牌	获取价格	描述	数据表
VF40100G-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
VF40100G-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
VF40120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
VF40120C_10	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF40120C_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF40120C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
VF40120C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF40150C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
VF40150C_10	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF40150C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

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