Datasheet > VF40100C_15

VF40100C_15

更新时间： 2024-11-25 01:26:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	85K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VF40100C_15 数据手册

VF40100C

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.38 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Solder dip 275 °C max., 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

VF40100C

PIN 1

PIN 2

PIN 3

MECHANICAL DATA

Case: ITO-220AB

PRIMARY CHARACTERISTICS

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 20 A

100 V

Base P/N-E3

Base P/N-M3

RoHS-compliant, commercial grade

halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

250 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 20 A

T_Jmax.

Package

0.61 V

150 °C

ITO-220AB

Polarity: As marked

Diode variation

Dual common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VF40100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current

I_F(AV)

(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

250

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 17-Aug-15

Document Number: 89459

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与VF40100C_15相关器件

型号	品牌	获取价格	描述	数据表
VF40100C-E3/45	VISHAY	获取价格	Rectifier Diode, Schottky, 20A, 100V V(RRM),
VF40100C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
VF40100C-M3/4W	VISHAY	获取价格	40A,100V,TRENCH SKY RECT.
VF40100G	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
VF40100G-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
VF40100G-M3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon, TO-220AB, HALOGE
VF40120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
VF40120C_10	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF40120C_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF40120C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

与VF40100C_15相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

VF40100C_15

VF40100C_15 数据手册

与VF40100C_15相关器件

与VF40100C_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VF40100C_15

VF40100C_15 数据手册

与VF40100C_15相关器件

与VF40100C_15相关文章

您还可以找

您在本页遇到什么问题？