5秒后页面跳转
VEMT2000X01 PDF预览

VEMT2000X01

更新时间: 2024-09-18 11:57:31
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管PC
页数 文件大小 规格书
8页 138K
描述
Silicon NPN Phototransistor

VEMT2000X01 技术参数

是否无铅:不含铅生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.40.70.80风险等级:1.47
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:973688Samacsys Pin Count:2
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:VEMT2000X01Samacsys Released Date:2018-08-16 08:58:45
Is Samacsys:N其他特性:DAY LIGHT, HIGH SENSITIVITY
Coll-Emtr Bkdn Voltage-Min:20 V配置:SINGLE
最大暗电源:100 nA红外线范围:YES
JESD-609代码:e3标称光电流:6 mA
安装特点:SURFACE MOUNT功能数量:1
最大通态电流:0.05 A最高工作温度:100 °C
最低工作温度:-40 °C光电设备类型:PHOTO TRANSISTOR
峰值波长:860 nm最大功率耗散:0.1 W
形状:ROUND尺寸:1.8 mm
子类别:Photo Transistors表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

VEMT2000X01 数据手册

 浏览型号VEMT2000X01的Datasheet PDF文件第2页浏览型号VEMT2000X01的Datasheet PDF文件第3页浏览型号VEMT2000X01的Datasheet PDF文件第4页浏览型号VEMT2000X01的Datasheet PDF文件第5页浏览型号VEMT2000X01的Datasheet PDF文件第6页浏览型号VEMT2000X01的Datasheet PDF文件第7页 
VEMT2000X01, VEMT2020X01  
Vishay Semiconductors  
Silicon NPN Phototransistor  
FEATURES  
• Package type: surface mount  
• Package form: GW, RGW  
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8  
• AEC-Q101 qualified  
• High radiant sensitivity  
• Daylight blocking filter matched with 830 nm  
to 950 nm IR emitters  
• Fast response times  
VEMT2020X01  
VEMT2000X01  
21568  
• Angle of half sensitivity: = 15ꢀ  
• Package matched with IR emitter series VSMB2000X01  
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020  
• Lead (Pb)-free reflow soldering  
DESCRIPTION  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
VEMT2000X01 series are silicon NPN epitaxial planar  
phototransistors with daylight blocking filter in a miniature,  
black dome lens package for surface mounting. Filter  
bandwidth is matched with 830 nm to 950 nm IR emitters.  
• Halogen-free according to IEC 61249-2-21 definition  
APPLICATIONS  
• Detector in automotive applications  
• Photo interrupters  
• Miniature switches  
• Counters  
• Encoders  
• Position sensors  
PRODUCT SUMMARY  
COMPONENT  
VEMT2000X01  
VEMT2020X01  
Ica (mA)  
(deg)  
15  
0.5 (nm)  
6
6
790 to 970  
790 to 970  
15  
Note  
Test condition see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
VEMT2000X01  
VEMT2020X01  
PACKAGING  
REMARKS  
PACKAGE FORM  
Reverse gullwing  
Gullwing  
Tape and reel  
Tape and reel  
MOQ: 6000 pcs, 6000 pcs/reel  
MOQ: 6000 pcs, 6000 pcs/reel  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 ꢀC, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VCEO  
VECO  
IC  
VALUE  
UNIT  
Collector emitter voltage  
Emitter collector voltage  
Collector current  
20  
V
V
7
50  
mA  
mW  
ꢀC  
ꢀC  
Power power dissipation  
Junction temperature  
Operating temperature range  
Tamb 75 ꢀC  
PV  
100  
Tj  
100  
Tamb  
- 40 to + 100  
Document Number: 81595  
Rev. 1.2, 21-Feb-11  
For technical questions, contact: detectortechsupport@vishay.com  
www.vishay.com  
1

与VEMT2000X01相关器件

型号 品牌 获取价格 描述 数据表
VEMT2003X01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2020X01 VISHAY

获取价格

PHOTOTRANSISTOR NPN GULLWING
VEMT2023SLX01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2023X01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2500X01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2500X01_11 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2503X01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2520X01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2523SLX01 VISHAY

获取价格

Silicon NPN Phototransistor
VEMT2523X01 VISHAY

获取价格

Silicon NPN Phototransistor