Datasheet > VBE100-12NO7

VBE100-12NO7

更新时间： 2024-09-14 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	252K
描述
快速单相桥系列提供各种封装和高达1200V的击穿电压。利用HiPerFRED芯片实现极快反向恢复能力。

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中文翻译

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数据手册

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VBE100-12NO7 数据手册

VBE100-12NO7

V_RRM

I_DAV

t_rr

1200V

100A

80ns

HiPerFRED Module

High Performance Fast Recovery Diode

Low Loss and Soft Recovery

1~ Rectifier Bridge

Part number

VBE100-12NO7

Backside: isolated

K10 L9

EG 1

PS 18

ECO-PAC2

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

● Isolation Voltage:

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

3600

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20210705a

12 3 4 5

中文翻译

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