Datasheet > V8P10-E386A

V8P10-E386A

更新时间： 2024-01-30 17:42:08

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	91K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V8P10-E386A 数据手册

New Product

V8P10

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.466 V at I = 4 A

FEATURES

TMBS^®eSMP^TMSeries

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky Technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-277A (SMPC)

• Meets MSL level 1, per J-STD-020C, LF max peak

of 260 °C

Anode 1

Cathode

Anode 2

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, free-

wheeling, dc-to-dc converters and polarity protection

applications.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

8 A

V_RRM

100 V

I_FSM

150 A

MECHANICAL DATA

Case: TO-277A (SMPC)

E_AS

100 mJ

0.582 V

150 °C

V_Fat I_F= 8 A

T_jmax.

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V8P10

V810

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (see Fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

150

100

Non-repetitive avalanche energy

at I_AS= 2.0 A, L = 50 mH, T_j= 25 °C

E_AS

Voltage rate of change (rated V_R)

dv/dt

10000

V/µs

°C

Operating junction and storage temperature range

T_J,T_STG

- 40 to + 150

Document Number: 89005

Revision: 26-Jun-07

www.vishay.com

12 3 4 5

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