V8K202DU
Vishay General Semiconductor
www.vishay.com
High Current Density Surface-Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.64 V at IF = 2 A
FEATURES
1
2
Available
• Trench MOS Schottky technology
3
• Low forward voltage drop, low power losses
4
• High efficiency operation
8
7
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
6
5
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
FlatPAK 5 x 6
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1 and / or 2
3 and / or 4
7, 8
5, 6
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications.
LINKS TO ADDITIONAL RESOURCES
3
D
3D Models
MECHANICAL DATA
Case: FlatPAK 5 x 6
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
PRIMARY CHARACTERISTICS
IF(AV)
2 x 4 A
200 V
60 A
VRRM
IFSM
(“_X” denotes revision code e.g. A, B,.....)
VF at IF = 4 A (TJ = 125 °C)
TJ max.
0.72 V
150 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Package
FlatPAK 5 x 6
Circuit configuration
Separated cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V8K202DU
UNIT
Device marking code
V822D
200
4
Maximum repetitive peak reverse voltage
VRRM
V
A
A
(1)
IF(AV)
Maximum DC forward current per diode
(2)
IF(AV)
1.8
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
60
A
(3)
Operating junction temperature range
Storage temperature range
TJ
-40 to +150
-55 to +150
°C
°C
TSTG
Notes
(1)
(2)
(3)
With infinite heatsink
Free air, mounted on recommended pad area
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Revision: 20-Apr-2023
Document Number: 98150
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000