18 mm Dia. PROXIMITY FOCUSED
IMAGE INTENSIFIER ASSEMBLY
V6833P/V6833P-G/V7090P
FEATURES
GHigh Photocathode Sensitivity (GaAs Photocathode)
GABC (Automatic Brightness Control)
GBright Source Protection
GHigh Luminous Gain
GNo Image Distortion
GCompact and Light Weight
GAuto Gating Function (V6833P-G)
APPLICATIONS
GNight Viewer
Goggle, Hand Held Scope, HMD (Head Mount Display) etc.
Left: V6833P, Right: V7090P
SPECIFICATIONS
GENERAL
Parameter
V6833P / V6833P-G / V7090P
Unit
V
Input Voltage
+2 to +3
V
Max. Input Voltage
Max. Input Current
Spectral Response
Wavelength of Peak Response
+3.5
35
370 to 920
600 to 750
mA
nm
nm
—
mm
—
Material
Minimum Effective Diameter
GaAs
17.5
Borosilicate Glass
Photocathode
Material
mm
—
Input Window
Thickness
Index of Refraction (at 588 nm)
5.5
1.49
—
Stage of MCP
1
—
mm
Material
Minimum Effective Diameter
P43
17.5
Phosphor Screen
V6833P / V6833P-G: Inverting Concave Fiber Optic Plate
—
Output Window Material
V7090P: Straight Concave Fiber Optic Plate
—
g
Case Material
Weight
POM (Polyoxymethylene)
V6833P / V6833P-G: Approx. 80 / V7090P: Approx. 85
°C
Operating Ambient Temperature
Operating Ambient Humidity A
Storage Temperature
Storage Humidity A
-20 to +40
Below 70
-55 to +60
Below 70
% RH
°C
% RH
NOTE: ANo condensation
CHARACTERISTICS (at +20 °C)
Parameter
Min.
1000
—
—
1.0 × 104
—
Typ.
1500
170
Max.
—
—
—
Unit
µA/lm
mA/W
%
(lm/m2) / lx
lm/cm2
Lp/mm
%
Luminous
Photocathode
Sensitivity
Radiant B
Quantum Efficiency B
30
Luminous Gain
4.0 × 104
1.0 × 10-11
64
—
EBI
Luminous
5.0 × 10-11
Limiting Resolution
51
—
—
—
—
—
—
—
—
2.5 lp/mm
7.5 lp/mm
15 lp/mm
25 lp/mm
92
80
61
38
%
%
%
MTF
—
—
Magnification
0.96
—
1.04
NOTE: BAt the wavelength of peak response
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.