Datasheet > V62/12602-01XE

V62/12602-01XE

更新时间： 2024-11-19 11:06:59

品牌	Logo	应用领域
德州仪器 - TI		开关双倍数据速率
页数	文件大小	规格书
29页	651K
描述
增强型产品 DDR1、DDR2、DDR3 转换开关和 LDO \| PWP \| 20 \| -55 to 125

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V62/12602-01XE 数据手册

TPS51116

www.ti.com

SLUS609A–MAY 2004–REVISED JUNE 2004

COMPLETE DDR AND DDR2 MEMORY POWER SOLUTION

SYNCHRONOUS BUCK CONTROLLER, 3-A LDO, BUFFERED REFERENCE

FEATURES

DESCRIPTION

•

Synchronous Buck Controller (VDDQ)

The TPS51116 provides a complete power supply for

both DDR/SSTL-2 and DDR2/SSTL-18 memory sys-

tems. It integrates a synchronous buck controller with

a 3-A sink/source tracking linear regulator and

buffered low noise reference. The TPS51116 offers

the lowest total solution cost in systems where space

is at a premium. The TPS51116 synchronous control-

ler runs fixed 400kHz pseudo-constant frequency

PWM with an adaptive on-time control that can be

configured in D-CAP™ Mode for ease of use and

fastest transient response or in current mode to

support ceramic output capacitors. The 3-A

sink/source LDO maintains fast transient response

only requiring 20-µF (2 × 10 µF) of ceramic output

capacitance. In addition, the LDO supply input is

available externally to significantly reduce the total

power losses. The TPS51116 supports all of the

sleep state controls placing VTT at high-Z in S3

(suspend to RAM) and discharging VDDQ, VTT and

VTTREF (soft-off) in S4/S5 (suspend to disk). The

TPS51116 has all of the protection features including

thermal shutdown and is in a 20-pin HTSSOP

PowerPAD™ package.

– Wide-Input Voltage Range: 3.0-V to 28-V

– D–CAP™ Mode with 100-ns Load Step Re-

sponse

– Current Mode Option Supports Ceramic

Output Capacitors

– Supports Soft-Off in S4/S5 States

– Current Sensing from R_DS(on)or Resistor

– 2.5-V (DDR), 1.8-V (DDR2) or Adjustable

Output (1.5-V to 3.0-V)

– Equipped with Powergood, Overvoltage Pro-

tection and Undervoltage Protection

•

3-A LDO (VTT), Buffered Reference (VREF)

– Capable to Sink and Source 3 A

– LDO Input Available to Optimize Power

Losses

– Requires only 20-µF Ceramic Output Ca-

pacitor

– Buffered Low Noise 10-mA Output

– Accuracy ±20 mV for both VREF and VTT

– Supports High-Z in S3 and Soft-Off in S4/S5

– Thermal Shutdown

APPLICATIONS

•

DDR/DDR2 Memory Power Supplies

•

SSTL-2 SSTL-18 and HSTL Termination

TYPICAL APPLICATION

(DDR2)

Ceramic

TPS51116PWP

Ceramic

2 × 10 µF

VLDOIN VBST 20

1 µH

VTT

0.9 V

2 A

0.1 µF

VTT

DRVH 19

VDDQ

1.8 V

10 A

VTTGND

LL 18

GND

SP−CAP

2 × 150 µF

VTTSNS DRVL 17

Ceramic

GND

PGND 16

CS 15

2 × 10 µF

MODE

VTTREF

Ceramic

0.033 µF

V5IN 14

VREF

5V_IN

0.9 V

10 mA

COMP PGOOD 13

VDDQSNS S5 12

PGOOD

Ceramic

4.7 µF

GND

10 VDDQSET S3 11

UDG−04058

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...29

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与V62/12602-01XE相关器件

型号	品牌	获取价格	描述	数据表
V62/12602-01XE-T	TI	获取价格	增强型产品 DDR1、DDR2、DDR3 转换开关和 LDO \| PWP \| 20 \| -
V62/12603-01XE	TI	获取价格	具有 5.5μA 静态电流的 0.7V 输入电压、5V 固定输出电压升压转换器 \| DCK
V62/12604-01XE	TI	获取价格	LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIER
V62/12605-01XE	TI	获取价格	增强型产品低功耗 C674x 浮点 DSP + ARM9 处理器 - 345MHz \| G
V62/12606-01XE	TI	获取价格	增强型产品双高速差分线路驱动器 \| D \| 8 \| -40 to 85
V62/12607-01XE	TI	获取价格	9-CHANNEL RS-422 / RS-485 TRANSCEIVER
V62/12610-01XE	TI	获取价格	增强的产品高精度、低噪声运算放大器 \| D \| 8 \| -55 to 125
V62/12611-01XE	TI	获取价格	增强型产品：八路、144kHz、24 位同步采样 Σ-Δ ADC \| PAP \| 64 \|
V62/12612-01XE	TI	获取价格	VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER
V62/12612-01XE-T	TI	获取价格	VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER

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