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V62/08616-01XE PDF预览

V62/08616-01XE

更新时间： 2023-06-19 15:25:41
品牌 Logo 应用领域
德州仪器 - TI 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
9页 312K
描述
具有漏极开路输出的增强型产品 2 通道、1.65V 至 5.5V 缓冲器 | DCK | 6 | -55 to 125

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V62/08616-01XE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：TSSOP, TSSOP6,.08针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：5.22系列：LVC/LCX/Z
JESD-30 代码：R-PDSO-G6JESD-609代码：e4
长度：2 mm负载电容（CL）：50 pF
逻辑集成电路类型：BUFFER最大I（ol）：0.032 A
湿度敏感等级：1位数：2
功能数量：2输入次数：1
端子数量：6最高工作温度：125 °C
最低工作温度：-55 °C输出特性：OPEN-DRAIN
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP6,.08
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法：TR峰值回流温度（摄氏度）：260
电源：3.3 V最大电源电流（ICC）：0.01 mA
Prop。Delay @ Nom-Sup：5.7 ns传播延迟（tpd）：5.7 ns
认证状态：Not Qualified施密特触发器：NO
座面最大高度：1.1 mm子类别：Bus Driver/Transceivers
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：1.65 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：MILITARY
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：1.25 mm
Base Number Matches：1

V62/08616-01XE 数据手册

 浏览型号V62/08616-01XE的Datasheet PDF文件第2页浏览型号V62/08616-01XE的Datasheet PDF文件第3页浏览型号V62/08616-01XE的Datasheet PDF文件第4页浏览型号V62/08616-01XE的Datasheet PDF文件第5页浏览型号V62/08616-01XE的Datasheet PDF文件第6页浏览型号V62/08616-01XE的Datasheet PDF文件第7页 
SN74LVC2G07-EP  
www.ti.com ....................................................................................................................................................................................................... SCES719–MAY 2008  
DUAL BUFFER/DRIVER  
WITH OPEN-DRAIN OUTPUTS  
1
FEATURES  
•
Controlled Baseline  
•
Inputs and Open-Drain Outputs Accept  
Voltages up to 5.5 V  
–
–
–
One Assembly Site  
One Test Site  
•
•
•
•
Max tpd of 5.7 ns at 3.3 V  
Low Power Consumption, 10 µA Max ICC  
±24-mA Output Drive at 3.3 V  
One Fabrication Site  
•
•
Extended Temperature Performance of –55°C  
to 125°C  
Typical VOLP (Output Ground Bounce)  
<0.8 V at VCC = 3.3 V, TA = 25°C  
Enhanced Diminishing Manufacturing Sources  
(DMS) Support  
•
•
•
•
Typical VOHV (Output VOH Undershoot)  
>2 V at VCC = 3.3 V, TA = 25°C  
•
•
•
Enhanced Product-Change Notification  
(1)  
Ioff Supports Partial-Power-Down Mode  
Operation  
Qualification Pedigree  
Supports 5-V VCC Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not limited  
to, Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
ESD Protection Exceeds JESD 22  
–
–
–
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this component beyond specified  
performance and environmental limits.  
1000-V Charged-Device Model (C101)  
DCK PACKAGE  
(TOP VIEW)  
1A  
GND  
2A  
1
2
3
6
5
4
1Y  
VCC  
2Y  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
This dual buffer/driver is designed for 1.65-V to 5.5-V VCC operation. The output of the SN74LVC2G07 is open  
drain and can be connected to other open-drain outputs to implement active low wired OR or active high wired  
AND functions. The maximum sink current is 32 mA.  
This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
CHC  
–55°C to 125°C SOT (SC-70) – DCK  
Reel of 250  
SN74LVC2G07MDCKTEP  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
website at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2008, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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V62/08616-01XE 替代型号

型号 品牌 替代类型 描述 数据表
NL27WZ16DFT2G ONSEMI

类似代替

 Dual Buffer
NL27WZ07DFT2G ONSEMI

类似代替

 Dual Buffer with Open Drain Outputs
SN74LVC2G34DCKR TI

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