是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | VSSOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.24 | Is Samacsys: | N |
系列: | LVC/LCX/Z | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 2.3 mm |
负载电容(CL): | 50 pF | 逻辑集成电路类型: | AND GATE |
最大I(ol): | 0.032 A | 湿度敏感等级: | 1 |
功能数量: | 2 | 输入次数: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VSSOP | 封装等效代码: | TSSOP8,.12,20 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH |
包装方法: | TR | 峰值回流温度(摄氏度): | 260 |
电源: | 3.3 V | 最大电源电流(ICC): | 0.01 mA |
Prop。Delay @ Nom-Sup: | 5.7 ns | 传播延迟(tpd): | 5.7 ns |
认证状态: | Not Qualified | 施密特触发器: | NO |
座面最大高度: | 0.9 mm | 子类别: | Gates |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 1.65 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 2 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SN74LVC2G08DCURG4 | TI |
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DUAL 2 INPUT POSITIVE AND GATE | |
SN74LVC2G08DCUR | TI |
类似代替 |
DUAL 2 INPUT POSITIVE AND GATE |
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