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V62/07625-01XE PDF预览

V62/07625-01XE

更新时间: 2024-11-07 12:47:19
品牌 Logo 应用领域
德州仪器 - TI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
14页 495K
描述
SINGLE INVERTER GATE

V62/07625-01XE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOT-23
包装说明:LSSOP, TSOP5/6,.11,37针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:5.23Is Samacsys:N
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2.9 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.032 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:5最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
电源:3.3 V最大电源电流(ICC):0.01 mA
Prop。Delay @ Nom-Sup:5.7 ns传播延迟(tpd):13.9 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.45 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.6 mm
Base Number Matches:1

V62/07625-01XE 数据手册

 浏览型号V62/07625-01XE的Datasheet PDF文件第2页浏览型号V62/07625-01XE的Datasheet PDF文件第3页浏览型号V62/07625-01XE的Datasheet PDF文件第4页浏览型号V62/07625-01XE的Datasheet PDF文件第5页浏览型号V62/07625-01XE的Datasheet PDF文件第6页浏览型号V62/07625-01XE的Datasheet PDF文件第7页 
SN74LVC1G04-EP  
www.ti.com ................................................................................................................................................. SCES691AMARCH 2007REVISED OCTOBER 2008  
SINGLE INVERTER GATE  
1
FEATURES  
SUPPORTS DEFENSE, AEROSPACE,  
AND MEDICAL APPLICATIONS  
2
Supports 5-V VCC Operation  
Controlled Baseline  
One Assembly/Test Site  
One Fabrication Site  
Available in Military (–55°C/125°C)  
Temperature Range(1)  
Extended Product Life Cycle  
Extended Product-Change Notification  
Product Traceability  
Inputs Accept Voltages to 5.5 V  
Max tpd of 3.3 ns at 3.3 V  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
Ioff Supports Partial-Power-Down Mode  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Protection Exceeds JESD 22  
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
1000-V Charged-Device Model (C101)  
(1) Custom temperature ranges available  
DESCRIPTION/ORDERING INFORMATION  
This single inverter gate is designed for 1.65-V to 5.5-V VCC operation.  
The SN74LVC1G04 performs the Boolean function Y = A.  
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2007–2008, Texas Instruments Incorporated  

V62/07625-01XE 替代型号

型号 品牌 替代类型 描述 数据表
SN74LVC1G04MDBVREP TI

完全替代

SINGLE INVERTER GATE
SN74LVC1G06DBVR TI

类似代替

SINGLE INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUT
SN74LVC1G04DBVR TI

类似代替

SINGLE INVERTER

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