V62/06675-01XE

更新时间： 2024-11-26 12:47:19

品牌	Logo	应用领域
德州仪器 - TI		比较器放大器放大器电路光电二极管
页数	文件大小	规格书
17页	550K
描述
LinCMOSâ¢ DUAL DIFFERENTIAL COMPARATORS

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

V62/06675-01XE 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOIC
包装说明：	SOIC-8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	Factory Lead Time：	6 weeks
风险等级：	5.45	Is Samacsys：	N
放大器类型：	COMPARATOR	最大平均偏置电流 (IIB)：	0.00003 µA
最大输入失调电压：	10000 µV	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e4	长度：	4.9 mm
湿度敏感等级：	1	负供电电压上限：
标称负供电电压 (Vsup)：		功能数量：	2
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-55 °C	输出类型：	OPEN-DRAIN
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	包装方法：	TR
峰值回流温度（摄氏度）：	260	电源：	5 V
认证状态：	Not Qualified	标称响应时间：	650 ns
筛选级别：	MIL-STD-883	座面最大高度：	1.75 mm
子类别：	Comparator	最大压摆率：	0.15 mA
供电电压上限：	18 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	MILITARY	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3.9 mm	Base Number Matches：	1

V62/06675-01XE 数据手册

TLC372-EP

LinCMOS™ DUAL DIFFERENTIAL COMPARATORS

www.ti.com

SGLS385–MARCH 2007

FEATURES

•

Controlled Baseline

•

Common-Mode Input Voltage Range Includes

Ground

–

One Assembly/Test Site, One Fabrication

Site

•

Output Compatible With TTL, MOS, and CMOS

Pin-Compatible With LM393

•

Extended Temperature Performance of –55°C

to 125°C

D PACKAGE

(TOP VIEW)

Enhanced Diminishing Manufacturing Sources

(DMS) Support

•

Enhanced Product Change Notification

1OUT

1IN-

(1)

Qualification Pedigree

2OUT

2IN-

1IN+

GND

ESD Protection Exceeds 2000 V Per

MIL-STD-883, Method 3015; Exceeds 100 V

Using Machine Model (C = 200 pF, R = 0)

2IN+

•

Single or Dual-Supply Operation

SYMBOL (each comparator)

Wide Range of Supply Voltages . . .4 V to 18 V

Very Low Supply Current Drain . . .150 µA Typ

at 5 V

IN+

OUT

•

Fast Response Time . . . 200 ns Typ for

TTL-Level Input Step

IN -

•

Built-in ESD Protection

High Input Impedance . . . 10¹²Ω Typ

Extremely Low Input Bias Current. . .5 pA Typ

Ultrastable Low Input Offset Voltage

Input Offset Voltage Change at Worst-Case

Input Conditions Typically 0.23 µV/Month,

Including the First 30 Days

(1) Component qualification in accordance with JEDEC and

industry standards to ensure reliable operation over an

extended temperature range. This includes, but is not limited

to, Highly Accelerated Stress Test (HAST) or biased 85/85,

temperature cycle, autoclave or unbiased HAST,

electromigration, bond intermetallic life, and mold compound

life. Such qualification testing should not be viewed as

justifying use of this component beyond specified

performance and environmental limits.

DESCRIPTION/ORDERING INFORMATION

This device is fabricated using LinCMOS™ technology and consists of two independent voltage comparators,

each designed to operate from a single power supply. Operation from dual supplies is also possible if the

difference between the two supplies is 4 V to 18 V. Each device features extremely high input impedance

(typically greater than 10¹²Ω), allowing direct interfacing with high-impedance sources. The outputs are

n-channel open-drain configurations and can be connected to achieve positive-logic wired-AND relationships.

The TLC372 has internal electrostatic discharge (ESD) protection circuits and has been classified with a 2000-V

ESD rating using human-body-model (HBM) testing. However, care should be exercised in handling this device

as exposure to ESD may result in a degradation of the device parametric performance.

The TLC372 is characterized for operation from –55°C to 125°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...17

中文翻译

下载PDF

V62/06675-01XE 替代型号

型号	品牌	替代类型	描述	数据表
TLC372MDREP	TI	类似代替	LinCMOSâ¢ DUAL DIFFERENTIAL COMPARATORS

与V62/06675-01XE相关器件

型号	品牌	获取价格	描述	数据表
V62/06677-01XE	TI	获取价格	增强型产品 100Mbps 至 660Mbps、10:1 LVDS 串行器/解串器变送器
V62/06677-02XE	TI	获取价格	增强型产品 100Mbps 至 660Mbps、1:10 LVDS 串行器/解串器接收器
V62/06678-01XE	TI	获取价格	具有施密特触发输入的增强型产品单路 0.8V 至 2.7V 高速反相器 \| DBV \| 5
V62/06679-01XE	TI	获取价格	20-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS
V62/07603-01XE	TI	获取价格	QUADRUPLE DIFFERENTIAL LINE RECEIVER
V62/07604-01XE	TI	获取价格	NANOPOWER 1.8-V SOT23 COMPARATORS WITH VOLTAGE REFERENCE
V62/07605-01XE	TI	获取价格	HiRel Enhanced Product, dual, 30-V, 700-kHz operational amplifier \| D \| 8 \| -55 to 125
V62/07606-01XE	TI	获取价格	DUAL HIGH-SPEED LOW-NOISE OPERATIONAL AMPLIFIER
V62/07607-01XE	TI	获取价格	12 位 500MSPS 模数转换器 (ADC) - 增强型产品 \| PFP \| 80 \|
V62/07608-01XE	TI	获取价格	EMC OPTIMIZED CAN TRANSCEIVER

与V62/06675-01XE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

V62/06675-01XE

V62/06675-01XE 技术参数

V62/06675-01XE 数据手册

V62/06675-01XE 替代型号

与V62/06675-01XE相关器件

与V62/06675-01XE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V62/06675-01XE

V62/06675-01XE 技术参数

V62/06675-01XE 数据手册

V62/06675-01XE 替代型号

与V62/06675-01XE相关器件

与V62/06675-01XE相关文章

您还可以找

您在本页遇到什么问题？