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V62/06659-01XE PDF预览

V62/06659-01XE

更新时间： 2024-11-26 12:47:19
品牌 Logo 应用领域
德州仪器 - TI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
12页 538K
描述
DUAL BUFFER GATE

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V62/06659-01XE 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：SC-70, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：8 weeks
风险等级：5.24Is Samacsys：N
系列：LVC/LCX/ZJESD-30 代码：R-PDSO-G6
JESD-609代码：e4长度：2 mm
负载电容（CL）：50 pF逻辑集成电路类型：BUFFER
最大I（ol）：0.032 A湿度敏感等级：1
位数：2功能数量：2
输入次数：1端子数量：6
最高工作温度：125 °C最低工作温度：-55 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP6,.08封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法：TR
峰值回流温度（摄氏度）：260电源：3.3 V
最大电源电流（ICC）：0.01 mAProp。Delay @ Nom-Sup：5.5 ns
传播延迟（tpd）：11.5 ns认证状态：Not Qualified
施密特触发器：NO座面最大高度：1.1 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：1.65 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：MILITARY端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：1.25 mmBase Number Matches：1

V62/06659-01XE 数据手册

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SN74LVC2G34-EP  
DUAL BUFFER GATE  
www.ti.com  
SCES671–MARCH 2007  
FEATURES  
•
Controlled Baseline  
•
•
•
•
•
•
Supports 5-V VCC Operation  
–
–
–
One Assembly Site  
One Test Site  
Inputs Accept Voltages to 5.5 V  
Max tpd of 4.1 ns at 3.3 V  
One Fabrication Site  
Low-Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
•
•
Extended Temperature Performance of –55°C  
to 125°C  
Typical VOLP (Output Ground Bounce)  
<0.8 V at VCC = 3.3 V, TA = 25°C  
Enhanced Diminishing Manufacturing Sources  
(DMS) Support  
•
•
•
•
Typical VOHV (Output VOH Undershoot)  
>2 V at VCC = 3.3 V, TA = 25°C  
•
•
Enhanced Product-Change Notification  
(1)  
Qualification Pedigree  
Ioff Supports Partial-Power-Down Mode  
Operation  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not limited  
to, Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
ESD Protection Exceeds JESD 22  
–
–
–
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this component beyond specified  
performance and environmental limits.  
1000-V Charged-Device Model (C101)  
DCK PACKAGE  
(TOP VIEW)  
1A  
GND  
2A  
1Y  
1
2
3
6
5
4
V
CC  
2Y  
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
The SN74LVC2G34 is a dual buffer gate designed for 1.65-V to 5.5-V VCC operation. The SN74LVC2G34  
performs the Boolean function Y = A in positive logic.  
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING(3)  
–55°C to 125°C  
SOT (SC-70) – DCK  
Reel of 3000  
SN74LVC2G34MDCKREP  
CAZ  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
Web site at www.ti.com.  
(2) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
(3) The actual top-side marking has one additional character that designates the assembly/test site.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1234567...12

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