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V62/06655-01XE PDF预览

V62/06655-01XE

更新时间: 2024-11-23 03:55:55
品牌 Logo 应用领域
德州仪器 - TI 驱动器栅极触发器逻辑集成电路光电二极管输出元件
页数 文件大小 规格书
7页 142K
描述
SINGLE INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUT

V62/06655-01XE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SC-70, 5 PIN针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:5.33Is Samacsys:N
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G5
JESD-609代码:e4长度:2 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.032 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:5最高工作温度:125 °C
最低工作温度:-55 °C输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP5/6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TR
峰值回流温度(摄氏度):260电源:3.3 V
最大电源电流(ICC):0.01 mAProp。Delay @ Nom-Sup:6 ns
传播延迟(tpd):8 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.1 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:1.25 mmBase Number Matches:1

V62/06655-01XE 数据手册

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SN74LVC1G06-EP  
SINGLE INVERTER BUFFER/DRIVER  
WITH OPEN-DRAIN OUTPUT  
www.ti.com  
SCES669AJULY 2006REVISED MARCH 2007  
FEATURES  
Controlled Baseline  
Voltages up to 5.5 V  
One Assembly Site  
One Test Site  
Max tpd of 4 ns at 3.3 V  
Low Power Consumption, 10-µA Max ICC  
±24-mA Output Drive at 3.3 V  
One Fabrication Site  
Extended Temperature Performance of –55°C  
to 125°C  
Ioff Supports Partial-Power-Down Mode  
Operation  
Enhanced Diminishing Manufacturing Sources  
(DMS) Support  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
Enhanced Product-Change Notification  
ESD Protection Exceeds JESD 22  
(1)  
Qualification Pedigree  
2000-V Human-Body Model (A114-A)  
200-V Machine Model (A115-A)  
Available in the Texas Instruments  
NanoStar™ and NanoFree™ Packages  
1000-V Charged-Device Model (C101)  
Supports 5-V VCC Operation  
Input and Open-Drain Output Accept  
(1) Component qualification in accordance with JEDEC and  
industry standards to ensure reliable operation over an  
extended temperature range. This includes, but is not limited  
to, Highly Accelerated Stress Test (HAST) or biased 85/85,  
temperature cycle, autoclave or unbiased HAST,  
electromigration, bond intermetallic life, and mold compound  
life. Such qualification testing should not be viewed as  
justifying use of this component beyond specified  
performance and environmental limits.  
DCK PACKAGE  
(TOP VIEW)  
NC  
A
V
1
2
3
5
CC  
4
GND  
Y
See mechanical drawings for dimensions.  
DESCRIPTION/ORDERING INFORMATION  
The SN74LVC1G06 is a single inverter buffer/driver that is designed for 1.65-V to 5.5-V VCC operation.  
NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the  
die as the package.  
The output of the SN74LVC1G06 device is open drain and can be connected to other open-drain outputs to  
implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 32 mA.  
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs,  
preventing damaging current backflow through the device when it is powered down.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NanoStar, NanoFree are trademarks of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2006–2007, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  

V62/06655-01XE 替代型号

型号 品牌 替代类型 描述 数据表
SN74LVC1G06MDCKREP TI

完全替代

SINGLE INVERTER BUFFER/DRIVER WITH OPEN-DRAIN OUTPUT
NL17SZ06DFT2G ONSEMI

类似代替

Single Inverter with Open Drain Outputs
NL17SZ06DFT2 ONSEMI

类似代替

Single Inverter with Open Drain Outputs

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