Datasheet > 放大器电路 > 运算放大器> V62/04755-07XE

V62/04755-07XE

更新时间： 2024-11-17 12:47:19

品牌	Logo	应用领域
德州仪器 - TI		运算放大器放大器电路光电二极管
页数	文件大小	规格书
45页	1071K
描述
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

V62/04755-07XE 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOIC
包装说明：	SOIC-8	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.33.00.01	Factory Lead Time：	6 weeks
风险等级：	5.38	Is Samacsys：	N
放大器类型：	OPERATIONAL AMPLIFIER	架构：	VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：	0.07 µA	25C 时的最大偏置电流 (IIB)：	0.07 µA
最小共模抑制比：	85 dB	标称共模抑制比：	110 dB
频率补偿：	YES	最大输入失调电流 (IIO)：	850 µA
最大输入失调电压：	600 µV	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e4	长度：	4.9 mm
低-偏置：	YES	低-失调：	YES
微功率：	YES	湿度敏感等级：	1
负供电电压上限：	-20 V	标称负供电电压 (Vsup)：	-15 V
功能数量：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	包装方法：	TR
峰值回流温度（摄氏度）：	260	功率：	NO
电源：	5/+-15 V	可编程功率：	NO
认证状态：	Not Qualified	座面最大高度：	1.75 mm
最小摆率：	0.4 V/us	标称压摆率：	0.5 V/us
子类别：	Operational Amplifier	最大压摆率：	0.23 mA
供电电压上限：	20 V	标称供电电压 (Vsup)：	15 V
表面贴装：	YES	技术：	BIPOLAR
温度等级：	MILITARY	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
标称均一增益带宽：	1700 kHz	最小电压增益：	300000
宽带：	NO	宽度：	3.91 mm
Base Number Matches：	1

V62/04755-07XE 数据手册

TLE202x-EP, TLE202xA-EP

EXCALIBUR HIGH-SPEED LOW-POWER PRECISION

OPERATIONAL AMPLIFIERS

ꢀ

SGLS235D− FEBRUARY 2004 − REVISED SEPTEMBER 2010

Controlled Baseline

− One Assembly/Test Site, One Fabrication

High Unity-Gain Bandwidth . . . 2 MHz Typ

High Slew Rate . . . 0.45 V/μs Min

Supply-Current Change Over Full Temp

Site

Extended Temperature Performance of

−40°C to 125°C

Also Available in −55°C to 125°C

Enhanced Diminishing Manufacturing

Sources (DMS) Support

Range . . . 10 μA Typ at V

= ± 15 V

Specified for Both 5-V Single-Supply and

±15-V Operation

Phase-Reversal Protection

High Open-Loop Gain . . . 6.5 V/μV

(136 dB) Typ

Enhanced Product-Change Notification

†

Qualification Pedigree

Low Offset Voltage . . . 100 μV Max

Offset Voltage Drift With Time

0.005 μV/mo Typ

Low Input Bias Current . . . 50 nA Max

Supply Current . . . 300 μA Max

†

Component qualification in accordance with JEDEC and industry

standards to ensure reliable operation over an extended

temperature range. This includes, but is not limited to, Highly

Accelerated Stress Test (HAST) or biased 85/85, temperature

cycle, autoclave or unbiased HAST, electromigration, bond

intermetallic life, and mold compound life. Such qualification

testing should not be viewed as justifying use of this component

beyond specified performance and environmental limits.

Low Noise Voltage . . . 19 nV/√Hz Typ

description

The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new

Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly

improved slew rate and unity-gain bandwidth.

The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic

improvement in unity-gain bandwidth and slew rate over similar devices.

The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both

time and temperature. This means that a precision device remains a precision device even with changes in

temperature and over years of use.

This combination of excellent dc performance with a common-mode input voltage range that includes the

negative rail makes these devices the ideal choice for low-level signal conditioning applications in either

single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry

that eliminates an unexpected change in output states when one of the inputs goes below the negative supply

rail.

A variety of options are available in small-outline packaging for high-density systems applications.

The Q-suffix devices are characterized for operation over the full automotive temperature range of −40°C to

125°C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...45

中文翻译

下载PDF

V62/04755-07XE 替代型号

型号	品牌	替代类型	描述	数据表
TLE2021QDRG4Q1	TI	完全替代	EXCALIBUR HIGH-SPEED LOW-POWER PRECISION POERATIONAL AMPLIFIERS
MC33171DT	STMICROELECTRONICS	功能相似	Low consumption versus speed
MC33171DR2G	ONSEMI	功能相似	Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers

与V62/04755-07XE相关器件

型号	品牌	获取价格	描述	数据表
V62/04756-01XE	TI	获取价格	PRECISION PROGRAMMABLE REFERENCE
V62/04756-02XE	TI	获取价格	PRECISION PROGRAMMABLE REFERENCE
V62/04757-01XE	TI	获取价格	1-LINE TO 10-LINE CLOCK DRIVER WITH 3-STATE OUTPUTS
V62/04758-01XE	TI	获取价格	HEX INVERTER
V62/04759-01XE	TI	获取价格	QUADRUPLE 2-INPUT POSITIVE-AND GATE
V62/04760-01XE	TI	获取价格	OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
V62/04761-01XE	TI	获取价格	OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
V62/04762-01XE	TI	获取价格	OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
V62/04763-01XE	TI	获取价格	16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS
V62/04763-02XE	TI	获取价格	16-BIT BUS TRANSCEIVER WITH 3-STATE OUTPUTS

与V62/04755-07XE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

35

产品中心

服务支持

精选活动

关于我们

帮助中心

V62/04755-07XE

V62/04755-07XE 技术参数

V62/04755-07XE 数据手册

V62/04755-07XE 替代型号

与V62/04755-07XE相关器件

与V62/04755-07XE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V62/04755-07XE

V62/04755-07XE 技术参数

V62/04755-07XE 数据手册

V62/04755-07XE 替代型号

与V62/04755-07XE相关器件

与V62/04755-07XE相关文章

您还可以找

您在本页遇到什么问题？