Datasheet > V61M103C

V61M103C

更新时间： 2024-11-10 14:54:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	143K
描述
Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 5 A

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V61M103C 数据手册

V61M103C

Vishay General Semiconductor

www.vishay.com

Dual High Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.37 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TO-220AB

TYPICAL APPLICATIONS

PIN 1

PIN 2

CASE

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

PIN 3

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 30 A

100 V

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

V_RRM

I_FSM

320 A

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

V_Fat I_F= 30 A (125 °C)

T_Jmax.

0.63 V

175 °C

TO-220AB

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Package

M3 suffix meets JESD 201 class 1A whisker test

Circuit configuration

Common cathode

Polarity: as marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V61M103C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

320

(1)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Note

(1)

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J<1/ R_θJA

Revision: 22-Dec-2020

Document Number: 98162

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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