Datasheet > V40D100C

V40D100C

更新时间： 2024-11-15 14:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	120K
描述
Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

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V40D100C 数据手册

V40D100C

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.40 V at I_F= 5 A

FEATURES

eSMP^®Series

SMPD (TO-263AC)

Available

• Trench MOS Schottky technology

• Very low profile - typical height of 1.7 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Top View

Bottom View

• AEC-Q101 qualified available:

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection in commercial, inductrial, and

automotive application.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPD (TO-263AC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

I_F(AV)

2 x 20 A

100 V

V_RRM

I_FSM

V_Fat I_F= 20 A (T_A= 125 °C)

T_Jmax.

250 A

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

0.63 V

150 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPD (TO-263AC)

Common cathode

Circuit configuration

Polarity: as marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40D100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

I_FSM

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

250

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 27-Mar-2020

Document Number: 87950

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V40D100C相关器件

型号	品牌	获取价格	描述	数据表
V40D100CHM3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D100C-M3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D100C-M3_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D103C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at I
V40D120C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at I
V40D120CHM3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D120C-M3	VISHAY	获取价格	Very low profile - typical height of 1.7 mm
V40D120C-M3_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D45C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF
V40D60C	VISHAY	获取价格	Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF

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