V3NM153
Vishay General Semiconductor
www.vishay.com
Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
FEATURES
Available
• Low profile package - typical height of 0.88 mm
K
• Leadless DFN package with side-wettable
flanks suitable for customer AOI (Automatic
Optical Inspection)
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
A
DFN3820A
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
LINKS TO ADDITIONAL RESOURCES
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Compatible to SMP (DO-220AA) package case outline
EDA / CAD
Related
Documents
Packages
Marking
Application
Notes
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
3 A
150 V
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
VRRM
IFSM
80 A
VF at IF = 1.5 A (TJ = 125 °C)
TJ max.
0.55 V
175 °C
DFN3820A
Single
MECHANICAL DATA
Case: DFN3820A
Package
Circuit configuration
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3
-
halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3
- halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V3NM153
UNIT
Device marking code
3MP
150
3
Maximum repetitive peak reverse voltage
VRRM
V
A
A
(1)
IF(AV)
Maximum average forward rectified current (fig. 1)
(2)
IF(AV)
1.8
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
A
(3)
Operating junction and storage temperature range
Operating junction and storage temperature range
TJ
-40 to +175
-55 to +175
°C
°C
TSTG
Notes
(1)
(2)
(3)
Mounted on 10 mm x 10 mm copper pad area PCB
Free air, mounted on FR4 PCB, 2 oz., standard footprint
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Revision: 10-Nov-2023
Document Number: 98376
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000