Datasheet > V30120CI

V30120CI

更新时间： 2024-10-02 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	130K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

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V30120CI 数据手册

V30120CI

Vishay General Semiconductor

www.vishay.com

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.49 V at I_F= 5 A

FEATURES

TMBS^®

TO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

PIN 1

PIN 3

PIN 2

CASE

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 15 A

120 V

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_FSM

160 A

commercial grade

V_Fat I_F= 15 A (125 °C)

T_Jmax.

0.66 V

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

150 °C

TO-220AB

Package

Polarity: as marked

Diode variation

Common cathode

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30120CI

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

160

(1)

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-55 to +150

°C

T_STG

Note

(1)

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J<1/ R_JA

Revision: 20-Aug-2018

Document Number: 87544

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V30120CI相关器件

型号	品牌	获取价格	描述	数据表
V30120C-M3/4W	VISHAY	获取价格	DIODE 15 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V30120C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S_08	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S_11	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S_12	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S-E3/45	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30120S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30120S-E3_15	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier

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