Datasheet > V30100S_09

V30100S_09

更新时间： 2024-11-27 08:16:23

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	149K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

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数据手册

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V30100S_09 数据手册

New Product

V30100S, VF30100S, VB30100S, VI30100S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.39 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per JESD

22-B106 (for TO-220AB, ITO-220AB, and TO-262AA

package)

V30100S

VF30100S

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB30100S

VI30100S

PIN 1

PIN 3

PIN 2

MECHANICAL DATA

HEATSINK

Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

I_F(AV)

30 A

100 V

250 A

0.69 V

150 °C

V_RRM

I_FSM

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

V_Fat I_F= 30 A

T_Jmax.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30100S

VF30100S

VB30100S

VI30100S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

100

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

E_AS

250

230

1.0

Non-repetitive avalanche energy at T_J= 25 °C, L = 90 mH

Peak repetitive reverse current

at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

I_RRM

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 88941

Revision: 23-Oct-09

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与V30100S_09相关器件

型号	品牌	获取价格	描述	数据表
V30100S_13	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30100S-E3	VISHAY	获取价格	DIODE 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Recti
V30100S-E3/45	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
V30100S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30100S-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30100SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
V30100SG_11	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V30100SG-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
V30100SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
V30100SGHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier

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