Datasheet > V30100C_11

V30100C_11

更新时间： 2024-11-27 08:16:23

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	140K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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V30100C_11 数据手册

New Product

V30100C, VI30100C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.455 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

TO-220AB

TO-262AA

• Low thermal resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

VI30100C

V30100C

PIN 1

PIN 3

PIN 2

CASE

TYPICAL APPLICATIONS

PIN 3

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 15 A

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

V_RRM

100 V

160 A

0.63 V

150 °C

I_FSM

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

AEC-Q101 qualified

V_Fat I_F= 15 A

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30100C

VI30100C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

I_FSM

160

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 89158

Revision: 23-Mar-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V30100C_11相关器件

型号	品牌	获取价格	描述	数据表
V30100C_12	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30100C-E3	VISHAY	获取价格	Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at
V30100C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A
V30100CHM3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30100CI	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
V30100C-M3/4W	VISHAY	获取价格	DIODE 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V30100C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30100P	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V30100P_08	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A
V30100P-E3/45	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 8 A

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