Datasheet > V2PM12

V2PM12

更新时间： 2023-12-06 20:06:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	102K
描述
Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

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V2PM12 数据手册

V2PM12

Vishay General Semiconductor

www.vishay.com

Surface-Mount TMBS^®(Trench MOS Barrier Schottky) Rectifier

FEATURES

Available

• Very low profile - typical height of 0.65 mm

eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop

• Low power loss, high efficiency

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Top View

Bottom View

MicroSMP (DO-219AD)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

Cathode

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications, in commercial, industrial, and automotive

applications.

3D Models

PRIMARY CHARACTERISTICS

I_F(AV)

2 A

MECHANICAL DATA

V_RRM

120 V

30 A

Case: MicroSMP (DO-219AD)

I_FSM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, and RoHS-compliant 

V_Fat I_F= 2 A (125 °C)

T_Jmax.

0.65 V

175 °C

Base P/NHM3

- halogen-free, RoHS-compliant, and

Package

MicroSMP (DO-219AD)

Single

AEC-Q101 qualified

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Polarity: color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V2PM12

2MS

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

1.4

Maximum DC forward current

(2)

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J⁽³⁾, T_STG

-40 to +175

°C

Notes

(1)

(2)

(3)

Free air, mounted on recommended copper pad area

Mounted on 8.0 mm x 8.0 mm pad area

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_JA

Revision: 04-Aug-2020

Document Number: 87528

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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