Datasheet > V23990-P840-A49-PM

V23990-P840-A49-PM

更新时间： 2024-01-23 11:27:11

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
24页	1272K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-P840-A49-PM 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.73
Base Number Matches：	1

V23990-P840-A49-PM 数据手册

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V23990-P840-*4*-PM

datasheet

flow PIM 0 3^rdgen

Features

1200 V / 15 A

flow 0 housing

● 2 Clips housing in 12 and 17mm height

● Trench Fieldstop Technology IGBT4

● Optional w/o BRC

12mm housing

17mm housing

Target Applications

● Industrial Drives

Schematic

● Embedded Generation

Types

● V23990-P840-A48-PM

● V23990-P840-A49-PM

● V23990-P840-C48-PM

● V23990-P840-C49-PM

Maximum Ratings

T _j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Rectifier Diode

Repetitive peak reverse voltage

DC forward current

V _RRM

I _FAV

I _FSM

1600

T _s= 80°C

T _c= 80°C

T _j= T _jmax

t _p= 10 ms

T _j= T _jmax

Surge forward current

I²t-value

220

200

I ²

A²s

°C

T _s= 80°C

T _c= 80°C

P _tot

Power dissipation

T _jmax

Maximum Junction Temperature

150

Inverter IGBT

V _CE

I _C

Collector-emitter break down voltage

1200

T _s= 80°C

T _c= 80°C

T _j= T _jmax

DC collector current

I _CRM

t _plimited by T _jmax

Pulsed collector current

Turn off safe operating area

Power dissipation

V _CE≤ 1200 V, T _j≤ T _opmax

T _j= T _jmax

T _s= 80°C

T _c= 80°C

P _tot

V _GE

Gate-emitter peak voltage

Short circuit ratings

±20

t _SC

V _CC

T _j≤ 150 °C

V _GE= 15 V

µs

800

T _jmax

Maximum Junction Temperature

175

°C

19 Mar. 2016 / Revision 7

12 3 4 5 6 7...24

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