Datasheet > V23990-P767-A-PM

V23990-P767-A-PM

更新时间： 2024-09-20 01:18:55

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
24页	527K
描述
3~rectifier,BRC,Inverter, NTC

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中文翻译

获取价格

数据手册

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V23990-P767-A-PM 数据手册

V23990-P767-A-PM

flowPIM 2 3rd

1200V/35A

Features

flow2 housing

● 3~rectifier,BRC,Inverter, NTC

● Very Compact housing, easy to route

● IGBT4/ EmCon4 technology for low saturation losses

and improved EMC behavior

Target Applications

Schematic

● Motor Drives

● Power Generation

Types

● V23990-P767-A-PM

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Diode

Repetitive peak reverse voltage

Forward current per diode

Surge forward current

V_RRM

I_FAV

1600

T_h=80°C

DC current

t_p=10ms

T_c=80°C

I_FSM

700

T_j=25°C

I²t

A²s

I2t-value

2450

T_h=80°C

T_c=80°C

100

151

P_tot

T_j=T_jmax

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter IGBT

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

105

T_h=80°C

T_c=80°C

125

190

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

900

T_jmax

Maximum Junction Temperature

175

°C

Revision: 3

12 3 4 5 6 7...24

中文翻译

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