5秒后页面跳转
V23990-P630-A40 PDF预览

V23990-P630-A40

更新时间: 2024-09-19 01:20:51
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
23页 417K
描述
Industrial drives

V23990-P630-A40 数据手册

 浏览型号V23990-P630-A40的Datasheet PDF文件第2页浏览型号V23990-P630-A40的Datasheet PDF文件第3页浏览型号V23990-P630-A40的Datasheet PDF文件第4页浏览型号V23990-P630-A40的Datasheet PDF文件第5页浏览型号V23990-P630-A40的Datasheet PDF文件第6页浏览型号V23990-P630-A40的Datasheet PDF文件第7页 
V23990-P630-A40-PM  
preliminary datasheet  
flow 90PIM 1  
1200V/15A  
Features  
flow90PIM 1  
Trench Fieldstop Technology IGBT4 for low saturation loss  
Supports design with 90° mounting angle between  
heatsink and PCB  
Clip-in PCB mounting  
Clip or screw on heatsink mounting  
Schematic  
Target Applications  
Industrial drives  
Types  
V23990-P630-A40  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Input Rectifier Diode  
Repetitive peak reverse voltage  
DC forward current  
VRRM  
IFAV  
1600  
V
A
A
Th=80°C  
27  
36  
Tj=Tjmax  
tp=10ms  
Tj=Tjmax  
Tc=80°C  
IFSM  
Tj=25°C  
Surge forward current  
220  
200  
I2t-value  
I2t  
A2s  
W
Tj=150°C  
Th=80°C  
Tc=80°C  
33  
50  
Ptot  
Power dissipation per Diode  
Maximum Junction Temperature  
Tjmax  
150  
°C  
Inverter Transistor  
VCE  
IC  
Collector-emitter break down voltage  
DC collector current  
1200  
V
A
Th=80°C  
Tc=80°C  
21  
26  
Tj=Tjmax  
ICpulse  
tp limited by Tjmax  
Repetitive peak collector current  
Turn off safe operating area  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
45  
45  
A
VCE 1200V, Tj Top max  
A
Th=80°C  
Tc=80°C  
62  
95  
Ptot  
Tj=Tjmax  
W
V
VGE  
±20  
tSC  
Tj150°C  
10  
μs  
VCC  
VGE=15V  
800  
V
Tjmax  
Maximum Junction Temperature  
175  
°C  
copyright Vincotech  
1
Revision: 1  

与V23990-P630-A40相关器件

型号 品牌 获取价格 描述 数据表
V23990-P630-A40-P1-14 VINCOTECH

获取价格

Industrial drives
V23990-P630-A40-PM VINCOTECH

获取价格

Insulated Gate Bipolar Transistor, 26A I(C), 1200V V(BR)CES
V23990-P630-A44-PM VINCOTECH

获取价格

Insulated Gate Bipolar Transistor, 37A I(C), 1200V V(BR)CES
V23990-P630-A45-PM VINCOTECH

获取价格

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P631-A-PM VINCOTECH

获取价格

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P632-A-PM VINCOTECH

获取价格

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P633-A-PM VINCOTECH

获取价格

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P634-A-PM VINCOTECH

获取价格

Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
V23990-P635-A-D2-14 VINCOTECH

获取价格

Trench Fieldstop Technology IGBT3 for low saturation loss
V23990-P635-A-PM VINCOTECH

获取价格

clip or screw on heatsink mounting