Datasheet > V23990-P629-L48-PM

V23990-P629-L48-PM

更新时间： 2024-01-20 05:38:34

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	1462K
描述
Ultra fast switching frequency

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中文翻译

获取价格

数据手册

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V23990-P629-L48-PM 数据手册

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V23990ꢀP629ꢀL48ꢀPM V23990ꢀP629ꢀL48YꢀPM

V23990ꢀP629ꢀL49ꢀPM V23990ꢀP629ꢀL49YꢀPM

datasheet

flow BOOST 0

1200 V / 40 A

Features

flow 0 housing

● High efficiency dual boost

● Ultra fast switching frequency

● Low Inductance Layout

● 1200V IGBT and 1200V SiC diode

Target Applications

Schematic

● solar inverter

Types

● V23990ꢀP629ꢀL48ꢀPM

● V23990ꢀP629ꢀL48YꢀPM

● V23990ꢀP629ꢀL49ꢀPM

● V23990ꢀP629ꢀL49YꢀPM

Maximum Ratings

T _j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Bypass Diode (D7,D8)

Repetitive peak reverse voltage

Mean forward current

V _RRM

I _FAV

1600

T _j=T _jmax

t _p=10ms

T _j=T _jmax

T _s=80°C

I _FSM

Surge (nonꢀrepetitive) forward current

200

T _j=150°C

T _s=80°C

I ²

A²s

I ²tꢀvalue

P _tot

Power dissipation

Maximum Junction Temperature

T _jmax

150

°C

Input Boost IGBT (T1,T2)

V _CES

I _C

Collectorꢀemitter break down voltage

1200

T _j=T _jmax

T _s=80°C

DC collector current

I _CRM

t _plimited by T _jmax

Pulsed collector current

Turn off safe operating area

120

T _j≤150°C

V _CE<=V _CES

P _tot

V _GE

T _j=T _jmax

Power dissipation

113

±20

Gateꢀemitter peak voltage

Short circuit ratings

T _j≤150°C

V _GE=15V

t _SC

V _CC

µs

800

T _jmax

Maximum Junction Temperature

175

°C

11 Sep. 2015 / Revision 3

12 3 4 5 6 7...20

中文翻译

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