Datasheet > V23990-P588-X88-D1-14

V23990-P588-X88-D1-14

更新时间： 2024-02-25 21:01:42

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
23页	1305K
描述
Industrial drives embedded drives

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中文翻译

获取价格

数据手册

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V23990-P588-X88-D1-14 数据手册

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V23990-P588-*88-PM

flow1

1200V/8A

Features

flow1

● 3~rectifier, optional BRC, Inverter, NTC

● Very compact housing, easy to route

● IGBT! / EmCon4 technology for low saturation losses

and improved EMC behaviour

Target Applications

Schematic

● Industrial drives

● Embedded drives

Types

● V23990-P588-A88-PM

● V23990-P588-C88-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Diode

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

1600

T_h=80°C

T_j=T_jmax

t_p=10ms

T_c=80°C

I_FSM

Surge forward current

250

310

T_j=25°C

50 Hz half sine wave

I²t

A²s

I2t-value

T_h=80°C

T_c=80°C

P_tot

T_j=T_jmax

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

Collector-emitter break down voltage

DC collector current

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

I_Cpulse

t_plimited by T_jmax

V_CE≤ 1200V, T_j≤ T_opmax

T_j=T_jmax

Pulsed collector current

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

T_h=80°C

T_c=80°C

P_tot

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

800

T_jmax

Maximum Junction Temperature

175

°C

Revision: 1

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