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V23990-K429-A40-PM PDF预览

V23990-K429-A40-PM

更新时间: 2024-02-16 22:46:46
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
17页 1213K
描述
Trench Fieldstop IGBT4 technology

V23990-K429-A40-PM 数据手册

 浏览型号V23990-K429-A40-PM的Datasheet PDF文件第2页浏览型号V23990-K429-A40-PM的Datasheet PDF文件第3页浏览型号V23990-K429-A40-PM的Datasheet PDF文件第4页浏览型号V23990-K429-A40-PM的Datasheet PDF文件第5页浏览型号V23990-K429-A40-PM的Datasheet PDF文件第6页浏览型号V23990-K429-A40-PM的Datasheet PDF文件第7页 
V23990-K429-A40-PM  
MiniSKiiP® 3 PIM  
1200V / 75A  
MiniSKiiP® 3 housing  
Features  
Solderless interconnection  
Trench Fieldstop IGBT4 technology  
Target Applications  
Schematic  
Industrial Motor Drives  
Types  
V23990-K429-A40-PM  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
D8,D9,D10,D11,D12,D13  
Repetitive peak reverse voltage  
DC forward current  
VRRM  
IFAV  
1600  
69  
V
A
A
Tj=Tjmax  
tp=10ms  
Tj=Tjmax  
Th=80°C  
IFSM  
Surge forward current  
450  
1020  
77  
Tj=25°C  
Th=80°C  
I2t-value  
I2t  
A2s  
W
Ptot  
Power dissipation per Diode  
Maximum Junction Temperature  
Tjmax  
150  
°C  
T1,T2,T3,T4,T5,T6,T7  
Collector-emitter break down voltage  
DC collector current  
VCE  
IC  
ICpulse  
Ptot  
1200  
68  
V
A
Tj=Tjmax  
Th=80°C  
Th=80°C  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
225  
162  
±20  
A
W
V
VGE  
tSC  
Tj=150°C  
VGE=15V  
10  
µs  
V
VCC  
800  
Tjmax  
Maximum Junction Temperature  
175  
°C  
copyright Vincotech  
1
Revision: 5.1  

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