Datasheet > V23990-K428-A60-0B-PM

V23990-K428-A60-0B-PM

更新时间： 2024-02-24 18:53:07

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	2393K
描述
Mitsubishi Generation 6.1 technology

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中文翻译

获取价格

数据手册

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V23990-K428-A60-PM

MiniSKiiP® 3 PIM

1200V/50A

MiniSKiiP^®3 housing

Features

● Solderless interconnection

● Mitsubishi Generation 6.1 technology

Target Applications

Schematic

● Industrial Motor Drives

Types

● V23990-K428-A60-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

D8,D9,D10,D11,D12,D13

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

1600

T_h=80°C

T_j=T_jmax

t_p=10ms

T_j=T_jmax

T_c=80°C

I_FSM

Surge forward current

490

T_j=150°C

I²t

A²s

I2t-value

1200

T_h=80°C

T_c=80°C

P_tot

Power dissipation per Diode

Maximum Junction Temperature

117

T_jmax

150

°C

T1,T2,T3,T4,T5,T6,T7

Collector-emitter break down voltage

DC collector current

V_CE

I_C

1200

T_h=80°C

T_c=80°C

T_j=T_jmax

I_Cpulse

t_plimited by T_jmax

Pulsed collector current

100

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

VCE ≤ 1200V, Tj ≤ Top max

T_h=80°C

T_c=80°C

127

193

P_tot

T_j=T_jmax

V_GE

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

850

T_jmax

Maximum Junction Temperature

175

°C

Revision: 1.1

12 3 4 5 6 7...18

中文翻译

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