Datasheet > V23990-K420-A60-PM

V23990-K420-A60-PM

更新时间： 2024-02-04 16:25:16

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
5页	608K
描述
Mitsubishi Generation 6.1 technology

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中文翻译

获取价格

数据手册

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V23990-K420-A60-PM 数据手册

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V23990-K420-A60-PM

target datasheet

MiniSKiiP® 3 PIM

1200V/100A

Features

MiniSKiiP® 3 housing

● Solderless interconnection

● Mitsubishi Generation 6.1 technology

Target Applications

Schematic

● Industrial Motor Drives

Types

● V23990-K420-A60-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Diode

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

1600

T_h=80°C

T_j=T_jmax

t_p=10ms

T_j=T_jmax

T_c=80°C

I_FSM

Surge forward current

500

T_j=25°C

I²t

A²s

I2t-value

1250

T_h=80°C

T_c=80°C

P_tot

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

1200

105

T_h=80°C

T_c=80°C

T_j=T_jmax

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

200

183

T_h=80°C

T_c=80°C

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

850

T_jmax

Maximum Junction Temperature

175

°C

Revision: 1

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