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V23990-K200-A40-1A-PM PDF预览

V23990-K200-A40-1A-PM

更新时间: 2024-01-31 18:34:49
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
17页 2254K
描述
Trench Fieldstop IGBT4 technology

V23990-K200-A40-1A-PM 数据手册

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V23990-K200-A40-PM  
MiniSKiiP® 1 PIM  
1200V / 15A  
MiniSKiiP® 1 housing  
Features  
Solderless interconnection  
Trench Fieldstop IGBT4 technology  
Target Applications  
Schematic  
Industrial drives  
Types  
V23990-K200-A40-PM  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
D8,D9,D10,D11,D12,D13  
Repetitive peak reverse voltage  
DC forward current  
VRRM  
IFAV  
1600  
29  
V
A
A
Tj=Tjmax  
Th=80°C  
IFSM  
Surge forward current  
220  
240  
46  
tp=10ms  
half sine  
Tj=25°C  
Th=80°C  
I2t-value  
I2t  
A2s  
W
Ptot  
Tj=Tjmax  
Power dissipation per Diode  
Maximum Junction Temperature  
Tjmax  
150  
°C  
T1,T2,T3,T4,T5,T6,T7  
Collector-emitter break down voltage  
DC collector current  
VCE  
IC  
ICpulse  
Ptot  
1200  
21  
V
A
Tj=Tjmax  
Th=80°C  
Th=80°C  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
45  
A
70  
W
V
VGE  
±20  
tSC  
Tj150°C  
10  
µs  
V
VCC  
VGE=15V  
800  
Tjmax  
Maximum Junction Temperature  
175  
°C  
Copyright by Vincotech  
1
Revision: 4.1  

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