Datasheet > V23990-K200-A40-1A-PM

V23990-K200-A40-1A-PM

更新时间： 2024-01-31 18:34:49

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
17页	2254K
描述
Trench Fieldstop IGBT4 technology

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中文翻译

获取价格

数据手册

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V23990-K200-A40-1A-PM 数据手册

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V23990-K200-A40-PM

MiniSKiiP® 1 PIM

1200V / 15A

MiniSKiiP^®1 housing

Features

● Solderless interconnection

● Trench Fieldstop IGBT4 technology

Target Applications

Schematic

● Industrial drives

Types

● V23990-K200-A40-PM

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

D8,D9,D10,D11,D12,D13

Repetitive peak reverse voltage

DC forward current

V_RRM

I_FAV

1600

T_j=T_jmax

T_h=80°C

I_FSM

Surge forward current

220

240

t_p=10ms

half sine

T_j=25°C

T_h=80°C

I²t-value

I²t

A²s

P_tot

T_j=T_jmax

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

T1,T2,T3,T4,T5,T6,T7

Collector-emitter break down voltage

DC collector current

V_CE

I_C

I_Cpulse

P_tot

1200

T_j=T_jmax

T_h=80°C

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

V_GE

±20

t_SC

T_j≤150°C

µs

V_CC

V_GE=15V

800

T_jmax

Maximum Junction Temperature

175

°C

Revision: 4.1

12 3 4 5 6 7...17

中文翻译

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