Datasheet > V20PWM63

V20PWM63

更新时间： 2023-12-06 20:10:16

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	135K
描述
High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V20PWM63 数据手册

V20PWM63

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.39 V at I_F= 5 A

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

SlimDPAK (TO-252AE)

PIN 1

PIN 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

HEATSINK

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

20 A

60 V

V_RRM

I_FSM

Base P/NHM3

- halogen-free, RoHS-compliant, and

200 A

0.55 V

175 °C

AEC-Q101 qualified

V_Fat I_F= 20 A (T_J= 125 °C)

T_Jmax.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SlimDPAK (TO-252AE)

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20PWM63

UNIT

Device marking code

V20PWM63

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

(1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

200

(2)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Notes

(1)

With infinite heatsink

The heat generated must be less than the thermal conductivity from junction to ambient: dP_D/dT_J< 1/R_θJA

(2)

Revision: 08-Oct-2021

Document Number: 98257

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

下载PDF

与V20PWM63相关器件

型号	品牌	描述	获取价格	数据表
V20PWM63C	VISHAY	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low	获取价格
V20S420	LITTELFUSE	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。	获取价格
V20S420P	LITTELFUSE	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。	获取价格
V20W60C-M3	VISHAY	Dual Trench MOS Barrier Schottky Rectifier	获取价格
V20W60C-M3I	VISHAY	Dual Trench MOS Barrier Schottky Rectifier	获取价格
V20WL45-M3	VISHAY	Trench MOS Barrier Schottky Rectifier	获取价格