Datasheet > V20M120C

V20M120C

更新时间： 2024-12-01 14:53:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	144K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V20M120C 数据手册

V20M120C, VI20M120C

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.55 V at I_F= 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

VI20M120C

V20M120C

PIN 1

PIN 3

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 10 A

120 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

120 A

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker testt

V_Fat I_F= 10 A

T_Jmax.

0.64 V

175 °C

Polarity: as marked

Package

TO-220AB, TO-262AA

Common cathode

Mounting Torque: 10 in-lbs maximum

Diode variations

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20M120C

VI20M120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

120

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

Revision: 23-Feb-18

Document Number: 89463

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V20M120C相关器件

型号	品牌	获取价格	描述	数据表
V20M120M-E3	VISHAY	获取价格	Low forward voltage drop, low power losses
V20M120M-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20NA1	MMD	获取价格	5.0mm x 3.2mm x 1.2mm 2 Pads Ceramic Package
V20NB1	MMD	获取价格	5.0mm x 3.2mm x 1.2mm 2 Pads Ceramic Package
V20NC1	MMD	获取价格	5.0mm x 3.2mm x 1.2mm 2 Pads Ceramic Package
V20P11P	LITTELFUSE	获取价格	Superior Peak Surge Current Ratings in Small Disc Sizes
V20P130AUTO	LITTELFUSE	获取价格	The AUMOV® Series Varistor offers 50% greater
V20P140AUTO	LITTELFUSE	获取价格	The AUMOV® Series Varistor offers 50% greater
V20P14AUTO	LITTELFUSE	获取价格	VARISTOR 22V 5KA DISC 20MM
V20P14AUTOL2A	LITTELFUSE	获取价格	RAD VARISTOR 20MM