Datasheet > V20KM100

V20KM100

更新时间： 2024-12-01 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	154K
描述
High Current Density Surface-Mount (TMBS?) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

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V20KM100 数据手册

V20KM100

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

(TMBS^®) Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.42 V at I_F= 5 A

FEATURES

Available

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

FlatPAK 5 x 6

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

1, 2, 3, 4

5, 6, 7, 8

TYPICAL APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

3D Models

MECHANICAL DATA

Case: FlatPAK 5 x 6

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

20 A

100 V

220 A

0.61 V

165 °C

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_Fat I_F= 20 A (T_J= 125 °C)

T_Jmax.

M3 and HM3 suffix meets JESD 201 class 2 whisker test 

Package

FlatPAK 5 x 6

Single

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20KM100

20M10

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current

(2)

I_F(AV)

4.2

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

220

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +165

-55 to +165

°C

T_STG

Notes

(1)

(2)

(3)

With infinite heatsink

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 04-Sep-2020

Document Number: 87147

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V20KM100相关器件

型号	品牌	获取价格	描述	数据表
V20KM120	VISHAY	获取价格	High Current Density Surface-Mount (TMBS?) Trench MOS Barrier Schottky Rectifier Ultra Low
V20KM45	VISHAY	获取价格	High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
V20KM60	VISHAY	获取价格	High Current Density Surface-Mount (TMBS?) Trench MOS Barrier Schottky Rectifier Ultra Low
V20M100M-E3	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A
V20M120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A
V20M120M-E3	VISHAY	获取价格	Low forward voltage drop, low power losses
V20M120M-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20NA1	MMD	获取价格	5.0mm x 3.2mm x 1.2mm 2 Pads Ceramic Package
V20NB1	MMD	获取价格	5.0mm x 3.2mm x 1.2mm 2 Pads Ceramic Package
V20NC1	MMD	获取价格	5.0mm x 3.2mm x 1.2mm 2 Pads Ceramic Package

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