Datasheet > V20D170C

V20D170C

更新时间： 2024-11-19 14:55:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	105K
描述
Dual High Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V20D170C 数据手册

V20D170C

Vishay General Semiconductor

www.vishay.com

Dual High Voltage TMBS^{® (}Trench MOS Barrier Schottky) Rectifier

FEATURES

eSMP Series

Available

• Very low profile - typical height of 1.7 mm

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

Top View

Bottom View

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

SMPD (TO-263AC)

TYPICAL APPLICATIONS

Anode 1

Anode 2

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

Cathodde

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: SMPD (TO-263AC)

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 10.0 A

170 V

V_RRM

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

I_FSM

V_Fat I_F= 10.0 A (T_A= 125 °C)

T_Jmax.

150 A

halogen-free, RoHS-compliant, and

0.68 V

175 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Package

SMPD (TO-263AC)

Common cathode

Circuit configurations

Polarity: As marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V20D170C

170

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

per device

per diode

Maximum average forward rectified current

(fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

150

(1)

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-55 to +175

°C

T_STG

Note

(1)

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 08-Jan-2019

Document Number: 87451

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与V20D170C相关器件

型号	品牌	获取价格	描述	数据表
V20D170C-M3/I	VISHAY	获取价格	Rectifier Diode,
V20D175	LITTELFUSE	获取价格	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。
V20D175P	LITTELFUSE	获取价格	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。
V20D202C	VISHAY	获取价格	Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier
V20D202C_15	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20D202CHM3_A/I	VISHAY	获取价格	RECTIFIER DIODE,
V20D202C-M3/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AC, HALOGE
V20D230P	LITTELFUSE	获取价格	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。
V20D250	LITTELFUSE	获取价格	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。
V20D250P	LITTELFUSE	获取价格	UltraMOV金属氧化压敏电阻用于要求高波峰浪涌额定电流和具有高能量吸收能力的应用设备。

与V20D170C相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

V20D170C

V20D170C 数据手册

与V20D170C相关器件

与V20D170C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V20D170C

V20D170C 数据手册

与V20D170C相关器件

与V20D170C相关文章

您还可以找

您在本页遇到什么问题？