Datasheet > V20100C-E3

V20100C-E3

更新时间： 2024-11-19 14:53:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	286K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

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中文翻译

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数据手册

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V20100C-E3 数据手册

V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.50 V at I_F= 5 A

FEATURES

TMBS^®

TO-220AB

ITO-220AB

• Trench MOS Schottky technology

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C (for D²PAK

(TO-263AB) package)

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder bath temperature 275 °C maximum 10 s, per

JESD 22-B106 (for TO-220AB, ITO-220AB, and

TO-262AA package)

V20100C

VF20100C

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK (TO-263AB)

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, D²PAK (TO-263AB),

and TO-262AA

VB20100C

VI20100C

PIN 1

PIN 2

PIN 1

PIN 2

HEATSINK

PIN 3

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

LINK TO ADDITIONAL RESOURCES

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

3D Models

E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 10 A

100 V

Mounting Torque: 10 in-lbs maximum

V_RRM

I_FSM

150 A

V_Fat I_F= 10 A

T_Jmax.

0.58 V

150 °C

TO-220AB, ITO-220AB,

Package

D²PAK (TO-263AB), TO-262AA

Circuit configuration

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL V20100C VF20100C VB20100C VI20100C UNIT

Maximum repetitive peak reverse voltage

V_RRM

100

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

I_FSM

E_AS

150

1.0

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

per diode

I_RRM

Voltage rate of change (rated V_R)

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 20-Jun-2023

Document Number: 88977

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与V20100C-E3相关器件

型号	品牌	获取价格	描述	数据表
V20100C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
V20100C-E3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100CHM3/4W	VISHAY	获取价格	DIODE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V20100R	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20100R-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
V20100R-M3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
V20100S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A
V20100S_11	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S_12	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A

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