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V130LTX20B PDF预览

V130LTX20B

更新时间: 2024-09-30 14:59:31
品牌 Logo 应用领域
力特 - LITTELFUSE 压敏电阻
页数 文件大小 规格书
8页 332K
描述
高可靠性Littelfuse压敏电阻使产品性能向前迈出了新的一步,它适用于要求质量和可靠性达到各类高可靠性标准的应用领域。 (MIL-STD-19500、MIL-S-750、Method 202。

V130LTX20B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:1.26
电路直流最大电压:175 V电路RMS最大电压:130 V
最大能量吸收容量:70 JJESD-609代码:e3
安装特点:THROUGH HOLE MOUNT端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
封装形状:DISK PACKAGE额定温度:85 °C
电阻器类型:VARISTOR子类别:Non-linear Resistors
表面贴装:NO端子面层:Tin (Sn)
端子位置:RADIAL端子形状:WIRE
Base Number Matches:1

V130LTX20B 数据手册

 浏览型号V130LTX20B的Datasheet PDF文件第2页浏览型号V130LTX20B的Datasheet PDF文件第3页浏览型号V130LTX20B的Datasheet PDF文件第4页浏览型号V130LTX20B的Datasheet PDF文件第5页浏览型号V130LTX20B的Datasheet PDF文件第6页浏览型号V130LTX20B的Datasheet PDF文件第7页 
NGB8202AN  
Ignition IGBT  
20 A, 400 V, N−Channel D2PAK  
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features  
monolithic circuitry integrating ESD and Overvoltage clamped  
protection for use in inductive coil drivers applications. Primary uses  
include Ignition, Direct Fuel Injection, or wherever high voltage and  
high current switching is required.  
Littelfuse.com  
20 AMPS, 400 VOLTS  
Features  
V
CE(on) = 1.3 V @  
Ideal for Coil−on−Plug and Driver−on−Coil Applications  
Gate−Emitter ESD Protection  
IC = 10 A, VGE . 4.5 V  
C
Temperature Compensated Gate−Collector Voltage Clamp Limits  
Stress Applied to Load  
Integrated ESD Diode Protection  
R
G
G
Low Threshold Voltage for Interfacing Power Loads to Logic or  
Microprocessor Devices  
R
GE  
Low Saturation Voltage  
High Pulsed Current Capability  
E
These are Pb−Free Devices  
Applications  
2
D PAK  
CASE 418B  
STYLE 4  
Ignition Systems  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM  
Rating  
Collector−Emitter Voltage  
Collector−Gate Voltage  
Gate−Emitter Voltage  
Symbol  
Value  
440  
Unit  
V
4
V
CES  
Collector  
V
CER  
440  
V
GB  
V
GE  
"15  
V
8202xxG  
AYWW  
Collector Current−Continuous  
I
C
20  
50  
A
DC  
A
AC  
@ T = 25°C − Pulsed  
C
Continuous Gate Current  
I
I
1.0  
20  
mA  
mA  
kV  
1
Gate  
3
G
Emitter  
2
Transient Gate Current (t2 ms, f100 Hz)  
ESD (Charged−Device Model)  
G
Collector  
ESD  
ESD  
2.0  
GB8202xx = Device Code  
xx = AN  
ESD (Human Body Model)  
kV  
R = 1500 W, C = 100 pF  
8.0  
A
= Assembly Location  
Y
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
ESD (Machine Model) R = 0 W, C = 200 pF  
ESD  
500  
V
Total Power Dissipation @ T = 25°C  
P
D
150  
1.0  
W
W/°C  
C
Derate above 25°C  
ORDERING INFORMATION  
Operating & Storage Temperature Range  
T , T  
−55 to +175  
°C  
J
stg  
Device  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NGB8202ANT4G  
NGB8202ANTF4G  
800/Tape & Reel  
700/Tape & Reel  
2
D PAK  
(Pb−Free)  
Specifications subject to change without notice. © 2016 Littelfuse, Inc.  
1
Publication Order Number:  
December, 2016 − Rev. 10  
NGB8202AN/D  

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