Datasheet > V10K60C-M3/H

V10K60C-M3/H

更新时间： 2024-11-20 02:51:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	135K
描述
High Current Density Surface-Mount TMBSÂ® (Trench MOS Barrier Schottky) Rectifier

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V10K60C-M3/H 数据手册

V10K60C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface-Mount

TMBS^®(Trench MOS Barrier Schottky) Rectifier

Ultra Low V_F= 0.35 V at I_F= 2.5 A

FEATURES

Available

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

FlatPAK 5 x 6

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

1, 2

3, 4

5, 6, 7, 8

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

DESIGN SUPPORT TOOLS AVAILABLE

3D Models

MECHANICAL DATA

Case: FlatPAK 5 x 6

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

60 V

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

AEC-Q101 qualified

100 A

0.44 V

150 °C

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test 

V_Fat I_F= 5 A (T_A= 125 °C)

T_Jmax.

Package

FlatPAK 5 x 6

Circuit configuration

Common cathode



MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10K60C

V1060C

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F(AV)

Maximum DC forward current per device

(2)

I_F(AV)

4.6

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

100

(3)

Operating junction temperature range

Storage temperature range

T_J

-40 to +150

-55 to +150

°C

T_STG

Notes

(1)

(2)

(3)

With infinite heatsink

Free air, mounted on recommended pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_JA

Revision: 01-Aug-2019

Document Number: 87477

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V10K60C-M3/H相关器件

型号	品牌	获取价格	描述	数据表
V10K60C-M3/I	VISHAY	获取价格	High Current Density Surface-Mount TMBSÂ® (Tr
V10K60DU	VISHAY	获取价格	High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
V10KL45C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V10KL45DU	VISHAY	获取价格	High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
V10KM100C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V10KM120C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V10KM120DU	VISHAY	获取价格	High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
V10KM150C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V10KM45C	VISHAY	获取价格	High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low
V10KM45DU	VISHAY	获取价格	High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

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