Datasheet > V10150S

V10150S

更新时间： 2024-11-21 05:55:55

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	166K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

V10150S 数据手册

New Product

V10150S, VF10150S, VB10150S & VI10150S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.59 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

and TO-262AA package)

V10150S

VF10150S

PIN 1

PIN 3

PIN 1

PIN 3

PIN 2

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

CASE

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

VB10150S

VI10150S

PIN 1

PIN 3

PIN 2

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

HEATSINK

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

I_F(AV)

10 A

150 V

120 A

0.69 V

V_RRM

I_FSM

Polarity: As marked

V_Fat I_F= 10 A

Mounting Torque: 10 in-lbs maximum

T_Jmax.

150 °C

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10150S

VF10150S VB10150S VI10150S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

150

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

120

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number: 89058

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与V10150S相关器件

型号	品牌	获取价格	描述	数据表
V10150S_11	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V10150S_12	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V10150S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
V10150S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
V10150SHM3/4W	VISHAY	获取价格	DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V10150SHM3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V10150S-M3/4W	VISHAY	获取价格	DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PL
V10150S-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
V10170C-M3	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5
V-10-1A4	OMRON	获取价格	Snap Acting/Limit Switch,

与V10150S相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

V10150S

V10150S 数据手册

与V10150S相关器件

与V10150S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

V10150S

V10150S 数据手册

与V10150S相关器件

与V10150S相关文章

您还可以找

您在本页遇到什么问题？